Performance analysis of ITCs on analog/RF, linearity and reliability performance metrics of tunnel FET with ultra-thin source region

Singh, Prabhat; Yadav, Dharmendra Singh

doi:10.1007/s00339-022-05741-4

Cited by 6 publications

(1 citation statement)

References 36 publications

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“…The transit time (τ = 1/2π f T ) is an important factor to consider in RF analysis 49 . The transit time represents the duration required for charge carriers to move from the source to the channel.…”

Section: Rf Performancementioning

confidence: 99%

Trade-off analysis between gm/ID and fT of GNR-FETs with single-gate and double-gate device structure

Ahmad,

Kumar,

Mech

et al. 2024

Sci Rep

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This study examines the operational parameters of field-effect transistors (FETs) using single-gate (SG) and double-gate (DG) graphene nanoribbons (GNRs) within the analog/RF domain. A detailed exploration is conducted through an atomistic pz orbital model, derived from the Hamiltonian of graphene nanoribbons, employing the nonequilibrium Green’s function formalism (NEGF) for analysis. The atomic characteristics of the GNRFETs channel are accurately described by utilizing a tight-binding Hamiltonian with an atomistic pz orbital basis set. The primary focus of the analysis revolves around essential analog/RF parameters such as transconductance, transconductance generation factor (TGF), output resistance, early voltage, intrinsic gain, gate capacitance, cut-off frequency, and transit time. Furthermore, the study assesses the gain frequency product (GFP), transfer frequency product (TFP), and gain transfer frequency product (GTFP) to evaluate the balance between transistor efficiency, gain, and cut-off frequency. The research outcomes indicate that double-gate GNRFETs exhibit superior analog/RF performance in comparison to their single-gate counterparts. However, both types of devices demonstrate cut-off frequencies in the gigahertz range. The extensive data presented in this study provides valuable insights into the characteristics of SG and DG GNRFETs, particularly in terms of the figure-of-merit (FoM) for analog/RF performance, offering a comprehensive analysis of the trade-offs in analog applications. In addition, the analysis has been extended be performing a high-performance hybrid 6T static random-access memory (SRAM) to get the impact in their circuit level variation as well as improvement in their circuit performance.

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Section: Rf Performancementioning

confidence: 99%