Performance assessment of metal sheet manufacturing plant using Boolean function technique

Gupta, Surbhi; Kanwar, Shefali; Sharma, Neelam

doi:10.1016/j.matpr.2023.02.003

Cited by 1 publication

(1 citation statement)

References 13 publications

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“…The values of the calculated voltage gain and static noise margin (SNM) are 102.1 V V À1 and 78.9%, respectively, at a supply voltage (V DD ) of 50 V. The details on the extraction of the SNM from the VTC can be found in Figure S12, Supporting Information. [37] Figure 4c shows that the measured gain increases with increasing V DD ; we could still achieve a satisfactory gain at low V DD . The complementary inverter also has the correct NOT logic function.…”

Section: Performance Of Complementary Invertersmentioning

confidence: 87%

Large‐Area Deposition of Highly Crystalline F4‐Tetracyanoquinodimethane Thin Films by Molecular Step Templates

Qiu,

Deng,

Shi

et al. 2024

Small Science

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Theoretical studies have unequivocally determined the exceptional electron transport properties of the fluorinated tetracyanoquinodimethane (Fx‐TCNQ) family, presenting a promising avenue for the realization of high‐performance n‐channel organic thin‐film transistors (OTFTs). However, owing to the intrinsic low crystallinity of this class of materials, Fx‐TCNQ‐based n‐channel OTFTs have not been experimentally achieved so far. Herein, a molecular step template (MST)‐assisted method that dramatically improves the crystallinity of F4‐TCNQ thin films is reported. The MST not only lowers the nucleation barrier of F4‐TCNQ molecules along the in‐plane direction but also reduces the nucleation density. This approach facilitates the realization of compact, oriented, and highly crystalline F4‐TCNQ thin films, resulting in impressive electron mobility of up to 2.58 cm2 V−1 s−1. Notably, this achievement surpasses the electron mobility of F4‐TCNQ thin films fabricated without the MST by a factor of 107. Furthermore, the incorporation of the p‐type MST provides a novel pathway for constructing complementary inverters, showcasing a high voltage gain of 112.6 V V−1 and a substantial noise margin of 89.3% with exceptional uniformity. In this work, a general and efficient route is paved to produce high‐performance n‐channel OTFTs toward organic complementary circuits.

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Section: Performance Of Complementary Invertersmentioning

confidence: 87%