Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

Liu, Leitao; Kumar, S. Bala; Ouyang, Yijian; Guo, Jing

doi:10.1109/ted.2011.2159221

Cited by 460 publications

(310 citation statements)

References 29 publications

Supporting

Mentioning

296

Contrasting

Unclassified

Order By: Relevance

“…Many TMDCs have band structures that are similar in their general features, as shown by first principles and tight-binding approximations 25,[80][81][82][83][84][85] and measured using a variety of spectroscopic tools 31,32,[86][87][88][89] . In general, MoX 2 and WX 2 compounds are semiconducting whereas NbX 2 and TaX 2 are metallic 25,[80][81][82][83][84] .…”

Section: Electronic Structurementioning

confidence: 99%

“…In general, MoX 2 and WX 2 compounds are semiconducting whereas NbX 2 and TaX 2 are metallic 25,[80][81][82][83][84] . The band structures of bulk and monolayer MoS 2 and WS 2 calculated from first principles are shown in Fig.…”

Section: Electronic Structurementioning

confidence: 99%

“…Theoretical simulations of single-layer MoS 2 transistor performance 82,98 have quantified the expected resilience of MoS 2 to shortchannel effects due to its atomic-scale thickness. These calculations show that top-gated MoS 2 transistors with gate lengths of 15 nm could operate in the ballistic regime with on-current as high as 1.6 mA μm -1 , subthreshold swing close to 60 mV per dec and current on/off ratio of 10 10 .…”

Section: Electrical Transport and Devicesmentioning

confidence: 99%

See 2 more Smart Citations

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

et al. 2012

View full text Add to dashboard Cite

699M any two-dimensional (2D) materials exist in bulk form as stacks of strongly bonded layers with weak interlayer attraction, allowing exfoliation into individual, atomically thin layers 1 . The form receiving the most attention today is graphene, the monolayer counterpart of graphite. The electronic band structure of graphene has a linear dispersion near the K point, and charge carriers can be described as massless Dirac fermions, providing scientists with an abundance of new physics 2,3 . Graphene is a unique example of an extremely thin electrical and thermal conductor 4 , with high carrier mobility 5 , and surprising molecular barrier properties 6,7 .Many other 2D materials are known, such as the TMDCs 8,9 , transition metal oxides including titania-and perovskite-based oxides 10,11 , and graphene analogues such as boron nitride (BN) 12,13 . In particular, TMDCs show a wide range of electronic, optical, mechanical, chemical and thermal properties that have been studied by researchers for decades 9,14,15 . There is at present a resurgence of scientific and engineering interest in TMDCs in their atomically thin 2D forms because of recent advances in sample preparation, optical detection, transfer and manipulation of 2D materials, and physical understanding of 2D materials learned from graphene.The 2D exfoliated versions of TMDCs offer properties that are complementary to yet distinct from those in graphene. Graphene displays an exceptionally high carrier mobility exceeding 10 6 cm 2 V -1 s -1 at 2 K (ref. 16) and exceeding 10 5 cm 2 V -1 s -1 at room temperature for devices encapsulated in BN dielectric layers 5 ; because pristine graphene lacks a bandgap, however, fieldeffect transistors (FETs) made from graphene cannot be effectively switched off and have low on/off switching ratios. Bandgaps can be engineered in graphene using nanostructuring [17][18][19] , chemical functionalization 20 and applying a high electric field to bilayer graphene 21 , but these methods add complexity and diminish mobility. In contrast, several 2D TMDCs possess sizable bandgaps around 1-2 eV (refs 9,14), promising interesting new FET and optoelectronic devices.TMDCs are a class of materials with the formula MX 2 , where M is a transition metal element from group IV (Ti, Zr, Hf and so on), group V (for instance V, Nb or Ta) or group VI (Mo, W and so on), and X is a chalcogen (S, Se or Te). These materials form layered structures of the form X-M-X, with the chalcogen atoms in two hexagonal planes separated by a plane of metal atoms, as shown in Fig. 1a. Adjacent layers are weakly held together to form the bulk crystal in a variety of polytypes, which vary in stacking orders and metal atom coordination, as shown in Fig. 1e. The overall symmetry of TMDCs is hexagonal or rhombohedral, and the metal atoms have octahedral or trigonal prismatic coordination. The electronic properties of TMDCs range from metallic to semiconducting, as summarized in Table 1. There are also TMDCs that exhibit exotic behaviours such as charge density waves ...

show abstract

Section: Electronic Structurementioning

confidence: 99%

Section: Electronic Structurementioning

confidence: 99%

Section: Electrical Transport and Devicesmentioning

confidence: 99%

See 1 more Smart Citation

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

et al. 2012

View full text Add to dashboard Cite

show abstract

“…Recently, various basic electronic components have been demonstrated based on few-layer MoS 2 , such as field-effect transistors (FETs) 13,14,15 , sensors 16 2 ) is a layered semiconductor from the transition metal dichalcogenides material family (TMD), MX 2 (M=Mo, W; X=S, Se, Te) 10,11,19,20 . A single molecular layer of MoS 2 consists of a layer of Mo atoms sandwiched between two layers of sulfur atoms by covalent bonds 10 .…”

Section: Two-dimensional (2d) Materials Such As Molybdenum Disulfidementioning

confidence: 99%

Integrated Circuits Based on Bilayer MoS₂ Transistors

et al. 2012

View full text Add to dashboard Cite

Two-dimensional (2D) materials, such as molybdenum disulfide (MoS 2 ), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS 2 allows it to overcome the shortcomings of zero-bandgap graphene, while still sharing many of graphene's advantages for electronic and optoelectronic applications. Discrete electronic and optoelectronic components, such as field-effect transistors, sensors and photodetectors made from few-layer MoS 2 show promising performance as potential substitute of Si in conventional electronics and of organic and amorphous Si semiconductors in ubiquitous systems and display applications. An important next step is the fabrication of fully integrated multi-stage circuits and logic building blocks on MoS 2 to demonstrate its capability for complex digital logic and high-frequency ac applications. This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology. The circuits comprise between two to twelve transistors seamlessly integrated side-byside on a single sheet of bilayer MoS 2 . Both enhancement-mode and depletion-mode transistors were fabricated thanks to the use of gate metals with different work functions. Keywords: molybdenum disulfide (MoS 2 ), transition metal dichalcogenides (TMD), Two-dimensional (2D)electronics, integrated circuits, ring oscillator.2 Two-dimensional (2D) materials, such as molybdenum disulfide (MoS 2 ) 1 and other members of the transition metal dichalcogenides family, represents the ultimate scaling of material dimension in the vertical direction. Nano-electronic devices built on 2D materials offer many benefits for further miniaturization beyond Moore's Law 2,3 and as a high-mobility option in the emerging field of large-area and low-cost electronics that is currently dominated by low-mobility amorphous silicon 4 and organic semiconductors 5,6 . MoS 2 , a 2D semiconductor material, is also attractive as a potential complement to graphene 7,8,9 for constructing digital circuits on flexible and transparent substrates, while its 1.8 eV bandgap 10,11 is advantageous over silicon for suppressing the source-to-drain tunneling at the scaling limit of transistors 12 . Molybdenum disulfide (MoS 2 ) is a layered semiconductor from the transition metal dichalcogenides material family (TMD), MX 2 (M=Mo, W; X=S, Se, Te) 10,11,19,20 . A single molecular layer of MoS 2 consists of a layer of Mo atoms sandwiched between two layers of sulfur atoms by covalent bonds 10 . The strong intra-layer covalent bonds confer MoS 2 crystals excellent mechanical strength, thermal stability up to 1090 C in inert environment 21 , and a surface free of dangling bonds. On the other hand, the weak inter-layer Van der Waal's force allows single-or fewlayer MoS 2 thin films to be created through micro-mechanical cleavage technique 22 and through anisotropic 2D 3 growth by chemical vapor deposition 23,24 . This unique property of MoS 2 , and 2D ...

show abstract

“…The presence of a band gap in single-layer MoS 2 on the other hand allows the realization of field-effect transistors with room-temperature on/off ratios that can exceed 10 8 (ref 3), which makes them interesting for building logic devices with low power dissipation. Recent simulations also predict that short channel single-layer MoS 2 devices could have higher oncurrent density than those based on Si, 25,26 a current on/off ratio higher than 10 10 , a high degree of immunity to short channel effects 2,27 and abrupt switching. 26 All these properties show that MoS 2 could be an interesting material for future applications in nanoelectronics.…”

mentioning

confidence: 99%

Integrated Circuits and Logic Operations Based on Single-Layer MoS₂

2011

View full text Add to dashboard Cite

Logic circuits and the ability to amplify electrical signals form the functional backbone of electronics along with the possibility to integrate multiple elements on the same chip. The miniaturization of electronic circuits is expected to reach fundamental limits in the near future. Two-dimensional materials such as single-layer MoS2 represent the ultimate limit of miniaturization in the vertical dimension, are interesting as building blocks of low-power nanoelectronic devices, and are suitable for integration due to their planar geometry. Because they are less than 1 nm thin, 2D materials in transistors could also lead to reduced short channel effects and result in fabrication of smaller and more power-efficient transistors. Here, we report on the first integrated circuit based on a two-dimensional semiconductor MoS2. Our integrated circuits are capable of operating as inverters, converting logical “1” into logical “0”, with room-temperature voltage gain higher than 1, making them suitable for incorporation into digital circuits. We also show that electrical circuits composed of single-layer MoS2 transistors are capable of performing the NOR logic operation, the basis from which all logical operations and full digital functionality can be deduced.

show abstract

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

Cited by 460 publications

References 29 publications

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

Integrated Circuits Based on Bilayer MoS₂ Transistors

Integrated Circuits and Logic Operations Based on Single-Layer MoS₂

Contact Info

Product

Resources

About

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

Cited by 460 publications

References 29 publications

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

Integrated Circuits Based on Bilayer MoS2 Transistors

Integrated Circuits and Logic Operations Based on Single-Layer MoS2

Contact Info

Product

Resources

About

Integrated Circuits Based on Bilayer MoS₂ Transistors

Integrated Circuits and Logic Operations Based on Single-Layer MoS₂