Performance simulation of solar cell based on AZO/CdTe heterostructure by SCAPS 1D software

Medina, José Carlos Zepeda; Rosendo, E.; Ruíz, Crisóforo Morales; Camacho-Espinosa, E.; Yarce, Leticia Treviño; Isasmendi, Reina Galeazzi; Romano-Trujillo, R.; Garcı́a-Salgado, G.; Solís, Antonio Coyopol; Caballero, Fabiola Gabriela Nieto; Sanchez, Ana Cristina Carranza

doi:10.1016/j.heliyon.2023.e14547

Cited by 14 publications

(5 citation statements)

References 28 publications

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“…Low absorber layer doping concentration causes a large number of carrier recombinations in the buffer layer due to the shifting of the depletion region towards the p-region. As absorber layer acceptor concentration increases, the depletion region moves further towards the nregion, resulting in more separation of photogenerated electron-hole pairs by an electric field in the n-region, which contributes to the photocurrent and increases efficiency [56]. The optimal value of the absorber layer acceptor concentration is 10 18 cm −3 , which is well within the acceptor density of 10 19 cm −3 found for the CMTS absorber layer obtained in previous studies [58][59][60].…”

Section: Impact Of Cmts Absorber Layer Acceptor Concentrationsupporting

confidence: 84%

“…Too thin the absorber layer results in a lower generation rate of electron-hole as it is not adequate enough to absorb all incident light. As the absorber layer thickness is increased, the increase in the optical path causes greater photon absorption in the absorber layer [56], and thus, the efficiency increases. As the thickness is further increased, the increased recombination rate slows the increase in efficiency.…”

Section: Impact Of Cmts Absorber Layer Thicknessmentioning

confidence: 99%

“…The photogenerated carrier separation is increased with an increase in buffer layer donor concentration as the depletion region shifts towards the absorber layer, and the electric field is increased on the CMTS/ZrS 2 junction. Thus, contacts collect an increased number of carriers, and efficiency increases [56,61,62]. The optimal value of the buffer layer donor concentration is 10 19 cm −3 .…”

Section: Impact Of Zrs 2 Buffer Layer Donor Concentrationmentioning

confidence: 99%

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SCAPS Modeling of CMTS Solar Cell with ZrS₂ Buffer Layer

Chowdhury

2024

Acta Phys. Pol. A

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The aim of this work is to study the photovoltaic performance of CMTS-based solar cell using solar cell capacitance simulator-1D. The use of ZrS2 as a buffer layer for CMTS-based solar cell is the novelty of this work. The impact of several parameters such as thickness, defect density, electron affinity, and doping concentration on the cell performances is investigated to improve cell performance. It is observed that these parameters impact significantly the solar cell performance. The optimized solar cell obtained an efficiency of 31.54% with an open-circuit voltage of 0.99 V, short-circuit current density of 36.44 mA/cm 2 , and fill factor of 87.69%. The results suggest guidelines for developing low-cost and highly efficient CMTS thin-film solar cells.

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Section: Impact Of Cmts Absorber Layer Acceptor Concentrationsupporting

confidence: 84%

Section: Impact Of Cmts Absorber Layer Thicknessmentioning

confidence: 99%

Section: Impact Of Zrs 2 Buffer Layer Donor Concentrationmentioning

confidence: 99%

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SCAPS Modeling of CMTS Solar Cell with ZrS₂ Buffer Layer

Chowdhury

2024

Acta Phys. Pol. A

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“…Because of this, compared to CdS or ZnSe, the ABS devices with In 2 S 3 window offers lesser V OC . 57 3.2. Function of the AgBiS 2 Absorber Layer.…”

Section: Results Andmentioning

confidence: 99%

Numerical Expedition on the Potential of AgBiS₂-Based Thin Film Solar Cells Employing Different Carrier Transport Layers

Sayeem,

Siddika,

Basu

et al. 2024

ACS Omega

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In this study, a photovoltaic (PV) device has been developed by using AgBiS 2 as the key material. The simulation of the photovoltaic cell has been performed using the SCAPS-1D simulator to analyze the impact of each layer. The design incorporates three window layers, CdS, In 2 S 3 , and ZnSe, alongside six familiar compounds, AlSb, CuGaSe 2 (CGS), CuS, MoS 2 , Sb 2 S 3 , and WSe 2 , as the back surface field (BSF) layers. These heterostructures aim to uncover the potential of AgBiS 2 in the realm of photovoltaic technology. When AgBiS 2 functions within a singular heterojunction, specifically in configurations such as n-CdS/p-AgBiS 2 , n-In 2 S 3 /p-AgBiS 2 , and n-ZnSe/p-AgBiS 2 , the resulting values for open-circuit voltage (V OC ) and the short circuit current (J SC ) are found to be ∼0.90 V and ∼32 mA/cm 2 , respectively, while the corresponding power conversion efficiencies (PCE) are 23.56%, 22.60%, and 23.62%, respectively. On the contrary, the incorporation of various BSF layers like AlSb, CGS, CuS, MoS 2 , Sb 2 S 3 , and WSe 2 results in a substantial increase in V OC , leading to an enhancement in PCE. Among the AgBiS 2 based different dual-heterostructures, the outstanding PCE of 30.04% with a V OC of 1.12 V is achieved by n-ZnSe/p-AgBiS 2 /p + -Sb 2 S 3 device. In comparison, the n-ZnSe/p-AgBiS 2 /p + -CGS structure exhibits a similar PCE of 30.03% with a V OC of 1.12 V. Additionally, the n-ZnSe/p-AgBiS 2 /p + -MoS 2 arrangement demonstrates a PCE of 29.95% and a V OC of 1.12 V. The effective band alignments observed at the interfaces of ZnSe/AgBiS 2 and AgBiS 2 /MoS 2 , ZnSe/AgBiS 2 and AgBiS 2 /CGS, as well as ZnSe/AgBiS 2 and AgBiS 2 /Sb 2 S 3 contribute to a substantial built-in potential, leading to an elevated V OC . As an alternative to ZnSe, the CdS window could offer similar performances, whereas In 2 S 3 might provide a lower efficiency. The elaborate simulation findings highlight the substantial potential of AgBiS 2 as an absorber, particularly when coupled with different windows and BSF layers. This opens avenues for experimental research focused on AgBiS 2 in the era of photovoltaic cells.

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“…V OC of a SC refers to the highest possible voltage that can be measured across its terminals in the absence of any external load eqs and , respectively, , J SC = J O false( normale q V / n k B T q − 1 false) V OC = k B T q ln true( J SC J normalO + 1 true) where T is the operating temperature, and k B is the Boltzmann constant. FF is derived by comparing the SC’s maximum power output ( P max ) to the theoretical power ( J SC V OC ).…”

Section: Simulation Methodology and Modeling Of The Psc Architecturementioning

confidence: 99%

Design Insights and Photovoltaic Performance Analysis of Non-Lead Inorganic RbSnX₃ (X = I, Br, Cl) Perovskites through Coupled Density Functional Theory and SCAPS-1D Simulation Frameworks

Ravidas,

Roy,

Samajdar

2024

ACS Appl. Electron. Mater.

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The development of lead (Pb)-free perovskite solar cells (PSCs) addresses the stability, commercialization, environmental, and health challenges associated with Pb-based PSCs. In the current research, Pb-free rubidium (Rb)-based perovskites RbSnX 3 (X = I, Br, Cl) were investigated through density functional theory (DFT) using the WIEN2K code and SCAPS-1D tool for analysis of photovoltaic (PV) applications. We computed the optoelectronic and structural properties of cubic phase RbSnX 3 (X = I, Br, Cl) perovskites (PVSKs). The DFT-computed band gap (E g ) of RbSnI 3 , RbSnBr 3 , and RbSnCl 3 were found to be 0.67, 1.28, and 1.53 eV, respectively, using the TB-mBJ exchange-correlation potential. The obtained E g of RbSnI 3 is very small, and is not suitable for solar cell (SC) applications. On the other hand, the E g values of RbSnBr 3 and RbSnCl 3 PVSKs are suitable for SC applications due to their closeness to the ideal E g of 1.45 eV, as predicted by the Shockley− Quiesser limit of theoretical efficiency. Therefore, we investigated the PV performance of RbSnBr 3 and RbSnCl 3 using SCAPS-1D software. The optical and electronic properties of cubic RbSnX 3 (X = Br, Cl) used as an absorber in PSCs extracted from DFT, have been used for the simulation. We varied the perovskite layer parameters to achieve the optimal performance for PSCs. We simulated RbSnX 3 (X = Br, Cl)-based PCS with several hole-transport layers (HTLs) and electron-transport layers (ETLs). Titanium dioxide (TiO 2 ) as the ETL and poly(triarylamine) (PTAA) as the HTL exhibited best performance among different combinations. The PSC structure fluorine-doped tin oxide (FTO)/TiO 2 /RbSnBr 3 /PTAA/Au delivered a PCE of 22.53%, J SC of 35.05 mA/cm 2 , V OC of 0.78 V, and FF of 73.06%, while FTO/TiO 2 /RbSnCl 3 /PTAA/Au exhibited a PCE of 22.64%, J SC of 26.63 mA/cm 2 , V OC of 1.08 V, and FF of 78.17%. The remarkable ability of RbSnX 3 (X = Br, Cl) PVSKs to capture photons efficiently and effectively can help in the development of PV and optoelectronic devices.

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Performance simulation of solar cell based on AZO/CdTe heterostructure by SCAPS 1D software

Cited by 14 publications

References 28 publications

SCAPS Modeling of CMTS Solar Cell with ZrS₂ Buffer Layer

SCAPS Modeling of CMTS Solar Cell with ZrS₂ Buffer Layer

Numerical Expedition on the Potential of AgBiS₂-Based Thin Film Solar Cells Employing Different Carrier Transport Layers

Design Insights and Photovoltaic Performance Analysis of Non-Lead Inorganic RbSnX₃ (X = I, Br, Cl) Perovskites through Coupled Density Functional Theory and SCAPS-1D Simulation Frameworks

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Performance simulation of solar cell based on AZO/CdTe heterostructure by SCAPS 1D software

Cited by 14 publications

References 28 publications

SCAPS Modeling of CMTS Solar Cell with ZrS2 Buffer Layer

SCAPS Modeling of CMTS Solar Cell with ZrS2 Buffer Layer

Numerical Expedition on the Potential of AgBiS2-Based Thin Film Solar Cells Employing Different Carrier Transport Layers

Design Insights and Photovoltaic Performance Analysis of Non-Lead Inorganic RbSnX3 (X = I, Br, Cl) Perovskites through Coupled Density Functional Theory and SCAPS-1D Simulation Frameworks

Contact Info

Product

Resources

About

SCAPS Modeling of CMTS Solar Cell with ZrS₂ Buffer Layer

SCAPS Modeling of CMTS Solar Cell with ZrS₂ Buffer Layer

Numerical Expedition on the Potential of AgBiS₂-Based Thin Film Solar Cells Employing Different Carrier Transport Layers

Design Insights and Photovoltaic Performance Analysis of Non-Lead Inorganic RbSnX₃ (X = I, Br, Cl) Perovskites through Coupled Density Functional Theory and SCAPS-1D Simulation Frameworks