Perspective on breakdown in Ga2O3 vertical rectifiers
Jian-Sian Li,
Chao-Ching Chiang,
Hsiao-Hsuan Wan
et al.
Abstract:While Ga2O3 rectifiers have shown promising performance, there is a lack of consensus on the significance of the few device breakdown results above 10 kV. We provide some perspective on how these are achieved and areas where a greater understanding of breakdown mechanisms, testing protocols, and wafer handling is needed to advance the technology.
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