Mg–Sn alloy thin films have garnered significant
attention
for their outstanding thermoelectric (TE) properties and cost-effective
elemental composition, making them potential candidates for wearable
energy harvesting devices. While previous studies have explored the
properties of these thin films, limited research has been conducted
to identify physical factors that can further enhance their performance.
In this study, we present a novel approach utilizing a convenient
electron beam coevaporation technique to fabricate Mg–Sn alloy
thin films. Experimental results revealed that controlling the tin
content in the Mg–Sn thin films at 38.9% led to the formation
of a mixed-phase structure, comprising Mg2Sn and Mg9Sn5. This dual-phase structure exhibited a notable
advantage in enhancing the TE performance. The presence of the Mg9Sn5 phase significantly increased the carrier concentration,
while maintaining the original Seebeck coefficient and mobility, thereby
improving the conductivity of Mg2Sn. Theoretical calculations
indicated that the Mg9Sn5 phase displayed 1D-like
characteristics, leading to a highly effective valley degeneracy and
consequently a high power factor. Overall, this work introduces a
promising approach to fabricate high-performance Mg–Sn alloy
thin films through electron beam coevaporation, opening up possibilities
for their application in wearable energy harvesting devices.