Perspective: Oxide molecular-beam epitaxy rocks!

Schlom, Darrell G.

doi:10.1063/1.4919763

Cited by 99 publications

(60 citation statements)

References 120 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similar to MBE of SrTiO 3 25,26 and other complex oxides, 14 these results emphasize the importance of stoichiometry control and the use of a low energetic deposition technique in attaining high quality perovskite films. The results furthermore show that mobilities can likely be increased further by the development of substrates with lower mismatch.…”

mentioning

confidence: 64%

High-mobility BaSnO3 grown by oxide molecular beam epitaxy

et al. 2016

View full text Add to dashboard Cite

High-mobility perovskite BaSnO3 films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO3 films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnOx. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO3. We demonstrate room temperature electron mobilities of 150 cm2 V−1 s−1 in films grown on PrScO3. The results open up a wide range of opportunities for future electronic devices.

show abstract

mentioning

confidence: 64%

High-mobility BaSnO3 grown by oxide molecular beam epitaxy

et al. 2016

View full text Add to dashboard Cite

show abstract

“…Considering the recent progress in growing oxide heterostructures along different crystallographic directions, [18][19][20][21][22] and the drive towards integrated oxide electronics, 23,24 ultrathin films of transition metal oxides (TMOs) appear to be an attractive possibility in the above context. Compared to s or p orbitals based systems, TMOs with d orbital dominated band structure has the possibility of high temperature realization.…”

Section: -11mentioning

confidence: 99%

High-temperature large-gap quantum anomalous Hall insulating state in ultrathin double perovskite films

et al. 2016

View full text Add to dashboard Cite

Motivated by the goal of realizing topological phases in thin films and heterostructures of correlated oxides, we propose here a quantum anomalous Hall insulator (QAHI) in ultrathin films of double perovskites based on mixed 3d-5d or 3d-4d transition metal ions, grown along [111] direction. Considering the specific case of ultrathin Ba2FeReO6, we present a theoretical analysis of an effective Hamiltonian derived from first-principles. We establish that a strong spin-orbit coupling at Re site, t2g symmetry of the low-energy d-bands, polarity of its [111] orientation of perovskite structure, and mixed 3d-5d chemistry results in room temperature magnetism with a robust QAHI state of Chern number C = 1 and a large band-gap. We uncover and highlight a non-relativistic orbital Rashba-type effect in addition to the spin-orbit coupling, that governs this QAHI state. Our prediction of a large topological band-gap of ∼ 100 meV in electronic structure, and a magnetic transition temperature Tc ∼ 300K estimated by Monte Carlo simulations, is expected to stimulate experimental efforts at synthesis of such films and enable possible practical applications of its dissipationless edge currents.

show abstract

“…Recent advances in growth techniques for complex oxides have led to remarkable progress in the ability to control film stoichiometry, thereby enabling improvements in their properties, often by orders of magnitude [1]. Despite these successes, even small concentrations of unavoidable point defects can control the properties of complex oxides.…”

Section: Introductionmentioning

confidence: 99%

Direct Observation of Sr Vacancies inSrTiO3by Quantitative Scanning Transmission Electron Microscopy

et al. 2016

View full text Add to dashboard Cite

Unveiling the identity, spatial configuration, and microscopic structure of point defects is one of the key challenges in materials science. Here, we demonstrate that quantitative scanning transmission electron microscopy (STEM) can be used to directly observe Sr vacancies in SrTiO 3 and to determine the atom column relaxations around them. By combining recent advances in quantitative STEM, including variableangle, high-angle annular dark-field imaging and rigid registration methods, with frozen phonon multislice image simulations, we identify which Sr columns contain vacancies and quantify the number of vacancies in them. Picometer precision measurements of the surrounding atom column positions show that the nearest-neighbor Ti atoms are displaced away from the Sr vacancies. The results open up a new methodology for studying the microscopic mechanisms by which point defects control materials properties.

show abstract

Perspective: Oxide molecular-beam epitaxy rocks!

Cited by 99 publications

References 120 publications

High-mobility BaSnO3 grown by oxide molecular beam epitaxy

High-mobility BaSnO3 grown by oxide molecular beam epitaxy

High-temperature large-gap quantum anomalous Hall insulating state in ultrathin double perovskite films

Direct Observation of Sr Vacancies inSrTiO3by Quantitative Scanning Transmission Electron Microscopy

Contact Info

Product

Resources

About