Phase change in Ge–Se chalcogenide glasses and its implications on optical temperature-sensing devices

Simon, Al-Amin Ahmed; Badamchi, Bahareh; Subbaraman, Harish; Sakaguchi, Yoshifumi; Mitkova, M.

doi:10.1007/s10854-020-03669-0

Cited by 13 publications

(10 citation statements)

References 49 publications

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“…6 . On the other hand, the samples with x = 40 display orthorhombic -GeSe, which agrees with the previous study 32 . As in the case for samples with x = 30, for both printed and thermally evaporated films, for x = 33, 40 compositions, hexagonal -Se is present.…”

Section: Resultssupporting

confidence: 93%

“…However, crystalline structure has been found in the as-printed films of stoichiometric composition Ge 33 Se 67 . Interestingly, this material, as we found out in our earlier study 32 , undergoes homogeneous crystallization, which requires more energy than the heterogeneous process characteristic for the non-stoichiometric compositions. Apparently, the milling introduces enough energy for the crystallization to occur.…”

Section: Discussionsupporting

confidence: 48%

“…In the printed films, in samples with x = 30, the strongest peak was found at 14.96° and in those with x = 33, at 15°. From the experimental results, it can be inferred that unlike thermally evaporated films 32 , the x = 30 thin films crystallize forming orthorhombic -GeSe 2 and such with x = 33 forms monoclinic -GeSe 2 . However, a 0.04° difference in the peak position could also be attributed to experimental error.…”

Section: Resultsmentioning

confidence: 98%

“…Ge x Se 100−x (x = 30, 33, 40). Bulk glasses are synthesized by the process described in our previous work 32 . Bulk glassy material is crushed into smaller pieces using wet milling and ultrasonication, respectively, to make nanoparticles.…”

Section: Resultsmentioning

confidence: 99%

“…The scope of this paper is confined to the study and comparison of printed and TE films. Although all specific germanium containing tetrahedral structural groups (CS, ES, and ETH) are present 32 , the Raman spectroscopy shows two significant differences between printed and TE films. The first is related to the reduction or absence of ETH structural units around 178 cm −1 37 in printed films before temperature annealing.…”

Section: Discussionmentioning

confidence: 95%

See 4 more Smart Citations

Introduction of Chalcogenide Glasses to Additive Manufacturing: Nanoparticle Ink Formulation, Inkjet Printing, and Phase Change Devices Fabrication

Simon

Badamchi

Subbaraman

et al. 2021

Sci Rep

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Chalcogenide glasses are one of the most versatile materials that have been widely researched because of their flexible optical, chemical, electronic, and phase change properties. Their application is usually in the form of thin films, which work as active layers in sensors and memory devices. In this work, we investigate the formulation of nanoparticle ink of Ge–Se chalcogenide glasses and its potential applications. The process steps reported in this work describe nanoparticle ink formulation from chalcogenide glasses, its application via inkjet printing and dip-coating methods and sintering to manufacture phase change devices. We report data regarding nanoparticle production by ball milling and ultrasonication along with the essential characteristics of the formed inks, like contact angle and viscosity. The printed chalcogenide glass films were characterized by Raman spectroscopy, X-ray diffraction, energy dispersive spectroscopy and atomic force microscopy. The printed films exhibited similar compositional, structural, electronic and optical properties as the thermally evaporated thin films. The crystallization processes of the printed films are discussed compared to those obtained by vacuum thermal deposition. We demonstrate the formation of printed thin films using nanoparticle inks, low-temperature sintering and proof for the first time, their application in electronic and photonic temperature sensors utilizing their phase change property. This work adds chalcogenide glasses to the list of inkjet printable materials, thus offering an easy way to form arbitrary device structures for optical and electronic applications.

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Section: Resultssupporting

confidence: 93%

Section: Discussionsupporting

confidence: 48%

Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 95%

See 3 more Smart Citations

Introduction of Chalcogenide Glasses to Additive Manufacturing: Nanoparticle Ink Formulation, Inkjet Printing, and Phase Change Devices Fabrication

Simon

Badamchi

Subbaraman

et al. 2021

Sci Rep

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Effect of Ion Irradiation on Amorphous and Crystalline Ge–Se and Their Application as Phase Change Temperature Sensor

Simon

Jones

Sakaguchi

et al. 2020

Physica Status Solidi (b)

Self Cite

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Research on phase change materials is predominantly focused on their application as memory devices or for temperature control which requires low phase change temperature. The Ge–Se binary chalcogenide glass system with its wide glass‐forming region is a potential candidate for high‐temperature and high‐radiation phase change applications. Herein, the concept of employing Ge x Se100−x glasses to monitor high temperature (450–528 °C) using the phase change effect, is reported. Materials selection, device structure, and performance of prototype sensors are analyzed. In addition, the effect of heavy ion irradiation by Xe ions with energies of 200, 600, and 1000 keV (fluence ≈1014 cm−2) on the Ge x Se100−x (x = 30, 33, 40) thin films and phase change devices is studied. The irradiation effect on the amorphous and crystalline structure of the thin films is evaluated by Raman spectroscopy and X‐ray diffraction (XRD). Although the changes in the structural units of amorphous films are negligible, in crystalline films orthorhombic‐GeSe2 crystals are found to be most affected by irradiation and a new phase, orthorhombic GeSe is found in the thin films after irradiation. The performance of a sensor with an active film of Ge40Se60 is also shown as an example.

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Comprehensive analysis of the phase stability, optoelectronic, mechanical, thermodynamic, and vibrational properties for prospective optoelectronic applications of novel combinations of chalcogenides XScTe2 (X = Li, Rb) by employing density functional theory

Khalil,

Hussain,

Zafar

et al. 2024

J Mater Sci

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Phase change in Ge–Se chalcogenide glasses and its implications on optical temperature-sensing devices

Cited by 13 publications

References 49 publications

Introduction of Chalcogenide Glasses to Additive Manufacturing: Nanoparticle Ink Formulation, Inkjet Printing, and Phase Change Devices Fabrication

Introduction of Chalcogenide Glasses to Additive Manufacturing: Nanoparticle Ink Formulation, Inkjet Printing, and Phase Change Devices Fabrication

Effect of Ion Irradiation on Amorphous and Crystalline Ge–Se and Their Application as Phase Change Temperature Sensor

Comprehensive analysis of the phase stability, optoelectronic, mechanical, thermodynamic, and vibrational properties for prospective optoelectronic applications of novel combinations of chalcogenides XScTe2 (X = Li, Rb) by employing density functional theory

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