2016
DOI: 10.1016/j.jallcom.2016.02.211
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Phase evolution and dielectric properties of fluorite-type Bi3(Nb0.9M0.1)O7+δ ceramics (M=Ti, Zr, Sn, W, δ=±0.05)

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Cited by 3 publications
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“…Moreover, Zr doped In 2 O 3 thin films showed low resistivity (6.4×10 -4 Ω cm) and higher carrier concentration (2.5×10 20 ) at a doping ratio of 7 at.% (Manoharan et al, 2015) and at last but not at least Zr doped TiO 2 sprayed thin films pointed out an increase by more times of the dielectric constant with Zr doping (Juma et al, 2016). The list of various metal oxide materials that have been doped with zirconium is even longer and more informative Lin et al, 2015;Myung et al, 2015;Nicon et al, 2016;Pang et al, 2016;Saini et al, 2016;Shanmugam et al, 2014;Sun et al, 2015;Thongbai et al, 2014;Wei et al, 2015;Zhang et al, 2008 3,6,12, and 20 at.%. The resulting solution was sprayed at a rate flow of 4 mL/min using nitrogen gas.…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, Zr doped In 2 O 3 thin films showed low resistivity (6.4×10 -4 Ω cm) and higher carrier concentration (2.5×10 20 ) at a doping ratio of 7 at.% (Manoharan et al, 2015) and at last but not at least Zr doped TiO 2 sprayed thin films pointed out an increase by more times of the dielectric constant with Zr doping (Juma et al, 2016). The list of various metal oxide materials that have been doped with zirconium is even longer and more informative Lin et al, 2015;Myung et al, 2015;Nicon et al, 2016;Pang et al, 2016;Saini et al, 2016;Shanmugam et al, 2014;Sun et al, 2015;Thongbai et al, 2014;Wei et al, 2015;Zhang et al, 2008 3,6,12, and 20 at.%. The resulting solution was sprayed at a rate flow of 4 mL/min using nitrogen gas.…”
Section: Introductionmentioning
confidence: 99%