2005
DOI: 10.1038/nature04036
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Phase-locking in double-point-contact spin-transfer devices

Abstract: Spin-transfer in nanometre-scale magnetic devices results from the torque on a ferromagnet owing to its interaction with a spin-polarized current and the electrons' spin angular momentum. Experiments have detected either a reversal or high-frequency (GHz) steady-state precession of the magnetization in giant magnetoresistance spin valves and magnetic tunnel junctions with current densities of more than 10(7) A cm(-2). Spin-transfer devices may enable high-density, low-power magnetic random access memory or dir… Show more

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Cited by 490 publications
(350 citation statements)
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References 26 publications
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“…Practical applications of spin torque nano-oscillators (STNOs) require high output power levels and low phase noise 8,9,10 . Several approaches pursuing these goals, such as phase locking of arrays of STNOs 11,12,13,14 and development of STNOs based on magnetic tunnel junctions 15,16,17,18 are active areas of research.…”
Section: Introductionmentioning
confidence: 99%
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“…Practical applications of spin torque nano-oscillators (STNOs) require high output power levels and low phase noise 8,9,10 . Several approaches pursuing these goals, such as phase locking of arrays of STNOs 11,12,13,14 and development of STNOs based on magnetic tunnel junctions 15,16,17,18 are active areas of research.…”
Section: Introductionmentioning
confidence: 99%
“…The two-dimensional systems offer the advantage of phase locking of nearby STNOs via interaction by spin waves propagating in the common ferromagnetic free layer 11,12 . The phase locking regime is attractive from the practical point of view because the output power of STNOs increases and their phase noise decreases in this regime 11,12,13 .…”
Section: Introductionmentioning
confidence: 99%
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“…Above all, the exciting topic in this research field is the synchronization of spin-torque oscillators by the magnetic [7][8][9][10] and/or electrical [11][12][13][14][15] couplings. The synchronization of spin-torque oscillators results in an enhancement of the emission power and an increase of the quality factor of the practical devices.…”
mentioning
confidence: 99%
“…These types of current-induced magnetization dynamics could potentially find use in novel functional spintronic devices [15] such as magnetic random access memories (MRAMs) [16], microwave oscillators [17,18], domain wall storage devices [19], and spin wave logic devices [20].…”
Section: Introductionmentioning
confidence: 99%