Phosphane copper(I) complexes as CVD precursors

Roth, Nina; Jakob, Alexander; Waechtler, Thomas; Schulz, Stefan E.; Geßner, Thomas; Lang, Heinrich

doi:10.1016/j.surfcoat.2007.05.004

Cited by 13 publications

(1 citation statement)

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“…[41][42][43] Beneficial for copper(I) complexes is their ability to deposit pure copper films at low temperature (Ͻ200°C) usually without addition of any reducing agents. [41] Representatives are copper(I) β-diketonates (for example, [Cu(η 2 -H 2 C=CHSiMe 3 )(hfac)], [44] hfac = 1,1,1,5,5,5-hexafluoro-2,4-pentanedionate; [(R 3 P) 2 Cu(acac)], R = nBu, [6,34,37] OMe, [45] Et, [45] acac = acetylacetonate), alkoxides (i.e., [Cu(OtBu)] 4 [38] ), and carboxylates ([((RO) 3 P) m CuO 2 CCF 3 ], [39] R = Me, Et, CH 2 CF 3 ; m = 1, 2, 3; [(nBu 3 P) m CuO 2 CR], [46] R = Me, CF 3 , Ph, CH=CHPh; m = 1, 2, 3). Commonly, copper(II) complexes are solids and need the addition of reducing agents for the deposition of pure copper films at higher temperature (Ͼ250°C).…”

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confidence: 99%

Synthesis of β‐Ketoiminato Copper(II) Complexes and Their Use in Copper Deposition

Preuß

Korb

Rüffer

et al. 2020

Zeitschrift anorg allge chemie

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The template synthesis of ethylenediamine (1) with 2‐acetylcyclopentanone (2) and [Cu(OAc)2·H2O] (5) produced [Cu(1‐(2‐cC5H6(O))C(Me)NCH2)2)] (6) in 82 % yield. Reaction of 5 with bis(benzoylacetone)diethylenetriamine (7, = LH)[1] gave [Cu(μ‐OAc)(L)(H2O)]2 (8). The solid‐state structures of 6 and 8 were determined confirming that 8 possesses intra‐ and intermolecular hydrogen bonds resulting in a dimer formation. The thermal behavior of 6–8 was studied by TG and TG‐MS. Under oxygen CuO was formed, whereas under Ar Cu/Cu2O (6) or Cu (8) was obtained. Complex 6 was used as CVD precursor for Cu and Cu‐oxide deposition (substrate temp., 400–500 °C, N2, 60 mL·min–1; O2, 60 mL·min–1; pressure, 0.87–1.5 mbar). The as‐obtained deposits show separated particles of different appearance at the substrate surface as evidenced by SEM. Non‐volatile 8 was applied as spin‐coating precursor for Cu and CuO formation [conc. 0.25 mol·L–1; volume 0.2 mL; 3000 rpm; depos. time 2 min; heating rate 50 K·min–1; holding time 60 min (Ar), 120 min (air) at 800 °C]. The samples on silicon consist of granulated particles (Ar) or are non‐dense with a grainy topography (air). EDX and XPS measurements confirmed the formation of Cu (Ar) or CuO (O2) with up to 13 mol‐% C impurity.

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Section: Introductionmentioning

confidence: 99%

Synthesis of β‐Ketoiminato Copper(II) Complexes and Their Use in Copper Deposition

Preuß

Korb

Rüffer

et al. 2020

Zeitschrift anorg allge chemie

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Advances in Deposition of Metals from Metal Enolates

Lang

Adner

Georgi

2016

Patai's Chemistry of Functional Groups

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This chapter describes the use of metal enolates as precursors for the deposition and growth of nano‐sized materials of a large variety of metal, mixed metal‐metal oxide, and alloy layers and patterns, an area that has rapidly developed during the last couple of decades. As metal enolates, mostly mononuclear main group, transition metal, and rare earth metal complexes featuring various β‐diketonate or β‐ketoiminate ligands have been used. Based on their intrinsic properties, for example, reactivity, transparency, conductivity, and magnetism, a large variety of metal and/or metal oxide deposits are available at present. As deposition processes, mainly gas‐phase (e.g., CVD2–9 and ALD8–19) or liquid‐phase procedures (including spin‐coating, dip‐coating, sol–gel, and printing techniques) were used. Controlled decomposition of the appropriate metal enolates allows the generation of diverse metal and metal oxide materials, for example, dense or porous thin layers and nanomaterials in the form of particles, dots, rods, tubes, and wires. Where appropriate, the similarities and differences, including elementary decomposition steps that are common for the respective metal enolate precursors, are discussed as well.

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