Photoconductivity, pH Sensitivity, Noise, and Channel Length Effects in Si Nanowire FET Sensors

Gasparyan, F. V.; Zadorozhnyi, Ihor; Khondkaryan, H. D.; Arakelyan, Artashes K.

doi:10.1186/s11671-018-2494-5

Cited by 12 publications

(14 citation statements)

References 43 publications

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“…The pH-sensitivity of the nanowires can be estimated according to the following expression: 35 with R ch the transistor channel resistance and Δ I DS the modulation of current induced by a change of ΔpH. The sensitivity of the nanowire is 46.4 mV/pH (at zero back gate voltage and V DS =1V) in agreement with the Nernst limit 59.5mV/pH for an ideal surface.…”

Section: Resultsmentioning

confidence: 62%

“…cm 2 .V − 1 .s − 1 , which is in the range of the bulk values with similar doping concentration, and slightly higher than previously reported value for top-down fabricated nanowires. 30,33,34 The The pH-sensitivity of the nanowires can be estimated according to the following expression: 35…”

Section: Resultsmentioning

confidence: 99%

“…Also, The application of a negative back gate voltage could be used to further improve the pH sensitivity of the nanowires. 35 Brain slices recording. The silicon nanowire arrays were interfaced with acute rat brain slices to assess their ability to record local field potential generated by the collective activity of a neuron assembly.…”

Section: = ∆ ∆mentioning

confidence: 99%

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Neuron-gated silicon nanowire field effect transistors to follow single spike propagation within neuronal network

Delacour

Veliev

Crozes

et al. 2020

Preprint

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Silicon nanowire field effect transistors SiNW-FETs provide a local probe for sensing neuronal activity at the subcellular scale, thanks to their nanometer size and ultrahigh sensitivity. The combination with micro patterning or microfluidic techniques to build model neurons networks above SiNW arrays could allow monitoring spike propagation and tailor specific stimulations, being useful to investigate network communications at multiple scales, such as plasticity or computing processes. This versatile device could be useful in many research areas, including diagnosis, prosthesis, and health security. Using top-down silicon nanowires-based array, we show here the ability to record electrical signals from matured neurons with top-down silicon nanowires, such as local field potential and unitary spike within ex-vivo preparations and hippocampal neurons grown on chip respectively. Furthermore, we demonstrate the ability to guide neurites above the sensors array during 3 weeks of cultures and follow propagation of spikes along cells. Silicon nanowire field effect transistors are obtained by top-down approach with CMOS compatible technology, showing the possibility to implement them at manufacturing level. These results confirm further the potentiality of the approach to follow spike propagation over large distances and at precise location along neuronal cells, by providing a multiscale addressing at the nano and mesoscales.

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Section: Resultsmentioning

confidence: 62%

Section: Resultsmentioning

confidence: 99%

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Neuron-gated silicon nanowire field effect transistors to follow single spike propagation within neuronal network

Delacour

Veliev

Crozes

et al. 2020

Preprint

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“…Note that the sequencing mechanisms of sensors based on ISFETs can actually be used only for detecting nucleic acid using pH sensitivity and amplifying the useful signal in real time. Static, dynamic characteristics and pH sensitivity of bio FET sensors made on nanosize silicon (nanowire, nanoribbon) are detailed study by us in [15] [16] [17]. In [17] pH sensitivity of the biochemical sensors was introduced as pH ds I ∆ ∆ , where, ds I ∆ and pH ∆ are the elementary changes in source-drain current and pH.…”

Section: Introductionmentioning

confidence: 99%

“…It is shown that SNR for Si NW based biochemical sensor has higher value, reaching up to 10 5 . In [15] [16] it is shown that in Si nanosize FET biosensors pH sensitivity increases with the increase of current channel length approaching the Nernst limit value of 59.5 mV/pH, indicating that larger area devices are more suitable for the pH sensing. The pH sensitivity increases also with the increasing of the back-gate voltage and approaches to 59.5 mV/pH.…”

Section: Introductionmentioning

confidence: 99%

ISFET Based DNA Sensor: Current-Voltage Characteristic and Sensitivity to DNA Molecules

Gasparyan¹,

Mazo²,

Simonyan³

et al. 2019

OJBIPHY

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Dependency of both source-drain current and current sensitivity of nanosize ISFET biosensor vs. concentration of DNA molecules in aqueous solution theoretically is investigated. In calculations it is carried out effects concerning charge carriers distribution in current channel and concerning carriers' mobility behavior in high electrical fields in the channel. The influence of DNA molecules on the work of ISFET biosensors is manifested by a change in the magnitude of the gate surface charge. Starting with fairly low concentrations of DNA, ISFET sensors respond to the presence of DNA molecules in an aqueous solution which is manifested by modulation of channel conductance and therefore the source-drain current changes of the field-effect transistor. It is shown that the current sensitivity with respect to concentration of DNA molecules linearly depends on the source-drain voltage and reaches high values.

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Neuron‐Gated Silicon Nanowire Field Effect Transistors to Follow Single Spike Propagation within Neuronal Network

et al. 2021

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During the last decades, the possibility to establish a bidirectional communication link with electrically excitable cells, such as neurons, has become very attractive for both fundamental and medical purposes. Many conceptual and technological advances have been achieved, including in the field of neuroelectronics, which remains a unique way to obtain quantitative measurements of neuronal electrical activity and tailor specific stimulations. In addition to recording the activity of many neurons individually, electrical devices are indeed able to stimulate or inhibit neural spikes at single-cell level within large networks, which makes them suitable tools to interrogate neural networks within the brain, [1] in slices or cell cultures. [2] With nearly 40 years of development in that field, numerous materials and designs have been implemented on many substrates, including transparent or flexible planar and 3D electrodes, [3][4][5][6] but still the current conventional microelectrodes (MEs) face limitations to reach the ultimate sensitivity and to probe subcellular events such as ion channel, dendrite, or

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Photoconductivity, pH Sensitivity, Noise, and Channel Length Effects in Si Nanowire FET Sensors

Cited by 12 publications

References 43 publications

Neuron-gated silicon nanowire field effect transistors to follow single spike propagation within neuronal network

Neuron-gated silicon nanowire field effect transistors to follow single spike propagation within neuronal network

ISFET Based DNA Sensor: Current-Voltage Characteristic and Sensitivity to DNA Molecules

Neuron‐Gated Silicon Nanowire Field Effect Transistors to Follow Single Spike Propagation within Neuronal Network

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