Photodetector performance analysis of a hybrid MnPc/DLC device with high photoresponsivity, sensitivity, and On/Off ratio

Unal, Fatih; Aktas, Sitki; Kurt, Mustafa Sukru; Koc, Mumin Mehmet; Coskun, Burhan; Aslan, Naim; Arslan, Tayfun; Gur, Mahmut

doi:10.1016/j.physb.2024.416584

Physica B: Condensed Matter

2024

DOI: 10.1016/j.physb.2024.416584

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Photodetector performance analysis of a hybrid MnPc/DLC device with high photoresponsivity, sensitivity, and On/Off ratio

Fatih Unal,

Sitki Aktas,

Mustafa Sukru Kurt

et al.

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Diode and Photodetector Characterization of Van der Waals Type InSe/CdS Heterojunction Device

Ünal

2024

KLUJES

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In this study, an InSe thin film layer was deposited onto a CdS thin film layer produced via the chemical bath deposition (CBD) method using the Successive Ionic Layer Adsorption and Reaction (SILAR) technique. The produced heterojunction devices were divided into two groups, and one group was annealed in an ambient atmosphere at 80°C for 1 hour. The electrical characterization of both heterojunction devices was performed in the dark and under an illumination intensity of 100 mW/cm². The fundamental diode parameters (n, ϕb, Rs, I0)were analyzed using different methods. Furthermore, key photodetector parameters such as photocurrent, photoresponsivity, photosensitivity, and specific detectivity were determined for these two devices.

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Diode and Photodetector Characterization of Van der Waals Type InSe/CdS Heterojunction Device

Ünal

2024

KLUJES

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Photodetector performance analysis of a hybrid MnPc/DLC device with high photoresponsivity, sensitivity, and On/Off ratio

Cited by 1 publication

References 64 publications

Diode and Photodetector Characterization of Van der Waals Type InSe/CdS Heterojunction Device

Diode and Photodetector Characterization of Van der Waals Type InSe/CdS Heterojunction Device

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