2001
DOI: 10.1063/1.1361288
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Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films

Abstract: Photoluminescence and cathodoluminescence ͑CL͒ spectra of stoichiometric and oxygen-deficient ZnO films grown on sapphire were examined. It was found that the intensities of the green and yellow emissions depend on the width of the free-carrier depletion region at the particle surface; the thinner the width, the larger the intensity. Experimental results and spectral analyses suggest that the mechanism responsible for the green ͑yellow͒ emission is the recombination of a delocalized electron close to the condu… Show more

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Cited by 1,014 publications
(559 citation statements)
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“…1a). There is no 'green' or 'yellow' luminescence usually observed in undoped ZnO samples and attributed to native defects; an ionized oxygen vacancy and an oxygen interstitial, respectively [8]. The decay of the X-ray excited luminescence is fast (0.8 ns), monoexponential in time over four decades which indicates that the luminescence arises from a homogeneous excited state.…”
Section: Resultsmentioning
confidence: 84%
“…1a). There is no 'green' or 'yellow' luminescence usually observed in undoped ZnO samples and attributed to native defects; an ionized oxygen vacancy and an oxygen interstitial, respectively [8]. The decay of the X-ray excited luminescence is fast (0.8 ns), monoexponential in time over four decades which indicates that the luminescence arises from a homogeneous excited state.…”
Section: Resultsmentioning
confidence: 84%
“…However, some authors assign it to zinc interstitial positions [19]. When the emission is yellow, orange and red, like in our case, it is mainly related to an excess of oxygen [18,20], oxygen interstitials [21][22][23] or zinc vacancies [20]. In our measurements we observe that the ratio of the intensities for visible defects-related band in respect to the UV band-to-band radiative recombination is much larger for the air annealed sample, which indicates a significant incorporation of oxygen and, thus, a reduction of oxygen vacancies.…”
Section: Resultsmentioning
confidence: 99%
“…Moreover, the oscillator strength along with absorption coefficients is often used as a method for calculating the concentration of impurities in a host. The oscillator strength of electric dipole-allowed transitions (Wu et al 2001) is given by the following relation (4): where k is the emission wavelength, p is the transition probability of the corresponding radiative transition, and 'n' is the index of refraction of the material which is 1.45 in the case of AgNWs. The spontaneous radiative lifetime is seen to be related in a simple way to the integrated cross section of the transition (Wu et al 2001) by the following relation:…”
Section: Resultsmentioning
confidence: 99%