Photoluminescence characteristics from amorphous SiC thin films with various structures deposited at low temperature

Influence of Growth Conditions of Hydrogenated Amorphous Silicon Carbide on Optical Properties of the Interfacial Layer in SiC-Based Photodevice

“…We observed a broad emission band at 438 nm and a shoulder at 522 nm. The blue emission is the result of the quantum size confinement effect as suggested by Xu et al for porous SiC [15,16], whereas the green luminescence emission centered at 522 nm has been found to be similar to that observed in bulk 3C-SiC and on porous silicon samples [17]. In Fig.…”

Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix

“…Recently, the films consisting of nanocrystalline silicon (nc-Si) in amorphous SiC matrix have attracted much attention because of the unique properties of nc-Si films and their potential applications in optoelectronic devices [1][2][3]. By controlling the nc-Si size, spacing and the surrounding dielectric materials (SiO 2 , SiC, SiN, etc.…”

Facile synthesis and improved photoluminescence of periodic SiC nanorod arrays by SiO2 templates-assisted magnetron sputtering method

“…It can be seen that SiO 2 colloidal monolayer and SiC films have a weak emission band located mainly in the red region. Zhou and Xu have reported a similar emission spectrum from SiC and the origin of the PL is attributed to the vacancy and surface states [13,21]. From the comparison, it is obvious that the PL intensities of SiC nanorod arrays increase, accompanying with five characteristic emission centers.…”