Photosensitive Complementary Inverters Based on n‐Channel MoS₂ and p‐Channel MoTe₂ Transistors for Light‐to‐Frequency Conversion Circuits

Abstract

For the application of optical sensors, low power consumption and high noise‐to‐signal ratio are highly required. To achieve better immunity on external noise in IoT sensors, light‐to‐frequency conversion (LFC) circuit is one of the essential elements. In article number http://doi.wiley.com/10.1002/pssr.201900317, Sung Hun Jin and Seung Gi Seo demonstrate photosensitive complementary inverters and their ring oscillators, composed of multilayered n‐channel molybdenum disulfide (MoS2) and p‐channel molybdenum ditelluride (MoTe2) field‐effect transistors (FETs). Selective detection of information on wavelength corresponding to illuminated light in the environment of external noise is successfully demonstrated by complementary photosensitive inverters, and additionally validated by SMART‐SPICE simulation.