Photosensitivity and charge injection dynamics of pentacene based thin-film transistors: influence of substrate temperature

Panigrahi, Debdatta; Khatun, Salma; Khan, Anasua; Sahoo, Aditi; Chatterjee, Swastika; Pal, Amlan J.; Dhar, A.

doi:10.1016/j.orgel.2019.04.022

Cited by 5 publications

(6 citation statements)

References 37 publications

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“…The highest mobilities recorded for the two deposition rates in this work are shown as an open brown hexagon (0.5 Å s −1 ) and open orange hexagon (5 Å s −1 ). The insulator used as the gate oxide for the data shown here is either untreated silicon dioxide or silicon nitride (except Poly(methyl methacrylate (PMMA) used in [24]). The deposition rate is mentioned along with the reference in the legend.…”

Section: Introductionmentioning

confidence: 99%

“…Figure 1.The figure summarizes the hole mobility in pentacene reported in previous works when the film is grown under different deposition conditions. The symbols denote hole mobility reported by Dimitrakopoulos et al[15] (open green triangle), Choo et al[16] (open red square), Knipp et al[10] (open blue circle), Knipp et al[17] (open green square), Pesavento et al[18] (open red circle), Guo et al[19][20][21] (open blue triangle), Shehu et al[22] (open green circle), Bae et al[23] (open red triangle), Panigrahi et al[24] (open blue square), Lin et al[25] (open green diamond), Klauk et al[26] (open red diamond) and Klauk et al[27] (open blue diamond). The highest mobilities recorded for the two deposition rates in this work are shown as an open brown hexagon (0.5 Å s −1 ) and open orange hexagon (5 Å s −1 ).…”

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confidence: 99%

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A study on the effect of film crystallinity and morphology on charge carrier concentration-dependent hole mobility in pentacene thin-film transistors: advantages of high deposition rate

Jena

Ray

2020

J. Phys. D: Appl. Phys.

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The combined effect of deposition rate and substrate temperature on the film crystallinity, morphology, and electronic properties of pentacene is studied. It is shown that the channel mobility in polycrystalline pentacene thin-film transistors is relatively immune to substrate temperature, and the films offer good hole mobility when grown at a high rate. This is advantageous when high throughput with low deviation in electrical parameters over devices are required. The surface morphology is characterized by atomic force microscopy measurements and the crystallinity is studied using x-ray diffraction. The effect of growth parameters on the crystalline phases of pentacene is correlated to the charge carrier transport. It is found that the field-effect mobility is primarily affected by the crystalline phases of the film rather than the grain size. The charge carrier dependence of the hole mobility is used to parameterize the dispersion (width) in the density of states (DOS) of the highest occupied molecular orbital of the films in the transistor channel region. It is found that the presence of multiple phases in the path of the charge carrier flow increases the dispersion of the DOS.

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Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

A study on the effect of film crystallinity and morphology on charge carrier concentration-dependent hole mobility in pentacene thin-film transistors: advantages of high deposition rate

Jena

Ray

2020

J. Phys. D: Appl. Phys.

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“…Deposition rate and substrate heating can also affect the pentacene morphology. [38][39][40] A dielectric surface with low surface energy as indicated by high contact angle should enhance better grain size and connectivity. Such a surface should be ideally hydrophobic in nature.…”

Section: Studies On Surface Energy Morphology and Capacitancementioning

confidence: 99%

Influence of Polymer Gate Dielectric on Organic Field‐Effect Transistors: Interdependence of Molecular Weight, Solvent Polarity, and Surface Energy—A Case Study with PMMA and Pentacene

Rajeev

Pillai

Nunzi

et al. 2021

Macro Materials & Eng

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The semiconductor/dielectric interface controls the performance of organic field-effect transistors (OFETs). Herein, the influence of both the molecular weight and the polarity of the solvent of a poly(methyl methacrylate) (PMMA)-based gate dielectric on the performance of pentacene OFETs is systematically investigated, by studying surface energy, surface roughness, morphology, leakage current, and capacitance of the dielectric. Various existing views on the role of the surface energy are considered while deriving a correlation. Larger pentacene grains are observed when the film is grown on high molecular weight-PMMA films cast from high dipole moment-solvent. The electrical properties of the corresponding OFETs show great improvement compared to those of OFETs fabricated with low molecular weight-PMMA film as the gate dielectric, irrespective of the solvent. The authors attribute this enhanced performance to the increased surface energy of the polymeric dielectric which turns out to be a strong function of its molecular weight and the dipole moment of the solvent. Bias-stress measurements on the OFETs confirm this correlation.

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“…Pentacene is a widely studied small molecular organic semiconductor and offers charge carrier mobility close to a-Si:H (0.5-1 cm 2 V −1 s −1 ) [7][8][9]. For Pentacene, the increase in T SUB has been shown to increase grain size [10,11], enhance crystallinity [12][13][14], improve injection properties [11], and increase desorption [15]. The increase in deposition rate has been shown to increase the monolayer (ML) coverage [10,16], reduce the crystallinity [17], reduce the number of conducting MLs [18], increase the packing density [19], and deteriorate the dynamic response of the OTFT in the off-state [20].…”

Section: Introductionmentioning

confidence: 99%

Influence of film morphology and crystallinity on charge carrier concentration-dependent hole mobility in hexamethyldisilazane treated Pentacene bottom contact devices

Jena¹,

Rajpoot²,

Dutta³

et al. 2021

J. Phys. D: Appl. Phys.

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The effect of substrate temperature and deposition rate on the film morphology, crystallinity, and electronic properties of Pentacene transistors treated with hexamethyldisilazane (HMDS) is studied. The gate bias dependence of mobility is used to estimate the width of the density of states and thereby quantify the disorder of the highest occupied molecular orbital. A low deposition rate and the substrate held at room temperature are shown to be the optimal conditions for good mobility (0.20 cm2 V−1 s−1) and low electronic disorder (50 ± 10 meV). X-ray diffraction measurements are performed to quantify the ratio of the two crystalline phases (thin-film phase and bulk phase) present in the film. The crystalline phases, rather than grain size, plays a significant role in determining the charge carrier mobility. Film deposition with the substrate at room temperature leads to low electronic disorder as the film is composed of one crystalline phase (thin-film phase), while high substrate temperature makes the film increasingly polymorphic, leading to increased electronic disorder (up to 230 meV). A high deposition rate leads to poor morphology of Pentacene near the source/drain electrode edge, thereby leading to increased contact resistance and electronic disorder. Hence, a low growth rate at room temperature is required for HMDS treated substrates to induce good crystalline properties of the film in the channel region, which results in enhanced electronic properties of the transistors.

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Photosensitivity and charge injection dynamics of pentacene based thin-film transistors: influence of substrate temperature

Cited by 5 publications

References 37 publications

A study on the effect of film crystallinity and morphology on charge carrier concentration-dependent hole mobility in pentacene thin-film transistors: advantages of high deposition rate

A study on the effect of film crystallinity and morphology on charge carrier concentration-dependent hole mobility in pentacene thin-film transistors: advantages of high deposition rate

Influence of Polymer Gate Dielectric on Organic Field‐Effect Transistors: Interdependence of Molecular Weight, Solvent Polarity, and Surface Energy—A Case Study with PMMA and Pentacene

Influence of film morphology and crystallinity on charge carrier concentration-dependent hole mobility in hexamethyldisilazane treated Pentacene bottom contact devices

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