Physical-Vapor-Transport growth of 4H silicon carbide single crystals by a tiling method

Zhang, Naifu; Gao, Yue; Zhu, Ruzhong; Wang, Rong; Yang, Deren; Pi, Xiaodong

doi:10.1016/j.jcrysgro.2022.126915

Cited by 6 publications

(2 citation statements)

References 15 publications

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“…The rocking curves of the bottom wafer have different shapes and even appear bimodal, suggesting that grain boundaries may have formed in this region. 11 The formation of grain boundaries is likely due to the accommodating tilt between different threading screw dislocation (TSD)-mediated growth centers. Asymmetric shapes could be due to the overlapping peaks when the X-ray beam straddles grain boundaries and bimodal shapes are due to large misorientations across the grain boundaries.…”

Section: Evolution Of Defects Caused By Ssds As the Pvt Growth Proceedsmentioning

confidence: 99%

Effect of subsurface damages in seed crystals on the crystal quality of 4H-SiC single crystals grown by the PVT technology

Li,

Hang,

Chen

et al. 2024

CrystEngComm

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Section: Evolution Of Defects Caused By Ssds As the Pvt Growth Proceedsmentioning

confidence: 99%

Effect of subsurface damages in seed crystals on the crystal quality of 4H-SiC single crystals grown by the PVT technology

Li,

Hang,

Chen

et al. 2024

CrystEngComm

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“…This indicates that the femtosecond-laser irradiation causes phase separation and amor- Experimental Methods: n-type 4H-SiC boules were grown by the physical vapor transport (PVT) technology. [37] 4H-SiC wafers with a thickness of 420 μm were processed by sequential wire sawing, lapping, and CMP, [11,38] and cut into 10 × 10 mm square samples. The center wavelength, pulse width, peak power, beam diameter, and repetition rate of the femtosecond laser used in this work were 1030 nm, 200 fs, 1 × 10 8 W, 1 μm, and 58 kHz, respectively.…”

Section: Laser-induced Damaged Layer By the Following Reactionsmentioning

confidence: 99%

Slicing of 4H‐SiC Wafers Combining Ultrafast Laser Irradiation and Bandgap‐Selective Photo‐Electrochemical Exfoliation

Shao

Pei

et al. 2023

Adv Materials Inter

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High‐efficiency and low‐loss processing is the mainstay to reduce the cost and deepen the application of 4H silicon carbide (4H‐SiC) wafers in high‐power and high‐frequency electronics. In this study, the high‐yield slicing of 4H‐SiC wafers is realized by combining femtosecond laser irradiation and bandgap‐selective photo‐electrochemical (PEC) exfoliation. By combining light‐absorption measurements, micro‐Raman, and micro‐photoluminescence characterizations, it is found that the damage layer formed inside 4H‐SiC after femtosecond‐laser irradiation consists of amorphous silicon and amorphous carbon. This indicates that the femtosecond‐laser irradiation leads to phase separation in 4H‐SiC. The bandgap of the damage layer is 0.4 eV. Taking advantage of the different bandgap energies of the damage layer and the perfect 4H‐SiC region, the damage layer is removed from the perfect region of 4H‐SiC by using bandgap‐selective PEC etching. During the PEC etching, light‐generated holes can selectively oxidize and corrode the damaged layer with the assistance of the HF solution, and leave the upper and lower perfect 4H‐SiC layers being intact. The current work contributes to the development of the high‐yield and high‐throughput femtosecond laser slicing of 4H‐SiC wafers.

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Magnetic shielding properties of an iron-based nanocrystalline alloy for induction heating systems

Li,

Zhao,

Liu

et al. 2024

Heliyon

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Physical-Vapor-Transport growth of 4H silicon carbide single crystals by a tiling method

Cited by 6 publications

References 15 publications

Effect of subsurface damages in seed crystals on the crystal quality of 4H-SiC single crystals grown by the PVT technology

Effect of subsurface damages in seed crystals on the crystal quality of 4H-SiC single crystals grown by the PVT technology

Slicing of 4H‐SiC Wafers Combining Ultrafast Laser Irradiation and Bandgap‐Selective Photo‐Electrochemical Exfoliation

Magnetic shielding properties of an iron-based nanocrystalline alloy for induction heating systems

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