Piezoelectric scattering limited mobility characteristics of a degenerate surface layer in compound semiconductors at low lattice temperatures

Effects of screening of the interaction potential on the mobility characteristics of degenerate surface layers in compound semiconductors at low lattice temperatures

“…(7), (8) and (10) that in the absence of screening, the piezoelectric scattering rate P pz (ε k ) turns out to be the same as that reported earlier [24].…”

“…Under high temperature conditions, when the screening is negligible, the mobility can be calculated analytically and the results have been reported in Ref. [24].…”

“…We consider only scattering by phonons with wavevector parallel to the surface as was done in the analyses reported earlier [1][2][3]10,14,[22][23][24][25]. Here k, k and q, the phonon wavevector, are in the plane of the surface, E 1 is the effective deformation potential constant and ρ v is the mass density, u l is the average acoustic velocity, d is the width of the layer of lattice atoms with which the electrons can interact.…”

“…The zero-field mobility may be expressed as [9,24] µ eff = e ε k P −1 eff m * µ ε k (12) where m * µ is the mobility effective mass of the electron and the average value of A for a degenerate 2DEG is given by…”

“…The effect of screening, however, has not been taken into account, although under the prevailing conditions as regards the lattice temperature and the carrier density, it should have been. The theory of piezoelectric scattering limited mobility characteristics of degenerate surface layers in compound semiconductors at low lattice temperatures has been developed elsewhere [24]. Interesting results for the surface layers in GaAs and ZnO have been reported.…”