Piezospectroscopic study of the Raman spectrum of cadmium sulfide

Briggs, R. J.; Ramdas, A. K.

doi:10.1103/physrevb.13.5518

Cited by 181 publications

(87 citation statements)

References 31 publications

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“…In particular, when an additional mechanical strain is caused by device operation, but was not present during the temperature calibration. The phonon frequency shift ∆ω ε resulting from strain in GaN and other wurtzite structure crystals is given by [52] …”

Section: Mechanical Strain and Accuracymentioning

confidence: 99%

“…We note that terms in (8) relating to shear strain are modified for other crystal symmetries [52]. Alternatively, (8) can be formulated in terms of mechanical stress (σ) by using the phonon deformation potentials per unit stress, ′, ′ and ′.…”

Section: Mechanical Strain and Accuracymentioning

confidence: 99%

“…Only considering the phonon shift induced by biaxial strain and neglecting the second and third terms in Eq. (8), a valid assumption for most device measurements, this can be expressed as [52]:…”

Section: Mechanical Strain and Accuracymentioning

confidence: 99%

See 2 more Smart Citations

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

Kuball

Pomeroy

2016

IEEE Trans. Device Mater. Relib.

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This is the author accepted manuscript (AAM). The final published version (version of record) is available online via IEEE at http://ieeexplore.ieee.org/document/7590091. Please refer to any applicable terms of use of the publisher. University of Bristol -Explore Bristol Research General rightsThis document is made available in accordance with publisher policies. Please cite only the published version using the reference above. Full terms of use are available: http://www.bristol.ac.uk/pure/about/ebr-termsAbstract-We review the Raman thermography technique, which has been developed to determine the temperature in and around the active area of semiconductor devices with submicron spatial and nanosecond temporal resolution. This is critical for the qualification of device technology, including for accelerated lifetime reliability testing and device design optimization. Its practical use is illustrated for GaN and GaAs based high electron mobility transistors, and opto-electronic devices. We also discuss how Raman thermography is used to validate device thermal models, as well as determining the thermal conductivity of materials relevant for electronic and opto-electronic devices.

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Section: Mechanical Strain and Accuracymentioning

confidence: 99%

Section: Mechanical Strain and Accuracymentioning

confidence: 99%

See 1 more Smart Citation

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

Kuball

Pomeroy

2016

IEEE Trans. Device Mater. Relib.

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“…Now we can add AlN to this comparison, based on Kleinman's [51] internal strain parameter ζ = (α − β)/(α + β) containing Keating's [52] valence force field parameters α and β for bond stretching and bond bending, respectively. II-VI materials like cubic ZnS exhibit a softening of the LO/TO singlet modes [53] that can also be observed for the A 1 (T O) mode in wurtzite CdS [54] and ZnO [11]. These material systems generally exhibit a rather large internal strain parameter (ζ ≈ 0.7), directly expressing a strong sensitivity of their ionic bonds to bending and bond-angle distortions while bond-stretching is difficult to achieve.…”

Section: B General Offsets and The Raman Mode Anisotropymentioning

confidence: 98%

Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements

et al. 2014

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We studied bulk crystals of wurtzite AlN by means of uniaxial pressure-dependent Raman measurements. As a result, we derive the phonon pressure coefficients and deformation potentials for all zone center optical phonon modes. For the A1 and E1 modes we further experimentally determined the uniaxial pressure dependence of their longitudinal optical -transverse optical (LO-TO) splittings. Our experimental approach delivers new insight into the large variance among previously reported phonon deformation potentials, which are predominantly based on heteroepitaxial growth of AlN and the ball-on-ring technique. Additionally, the measured phonon pressure coefficients are compared to their theoretical counterparts obtained by density functional theory implemented in the SIESTA package. Generally, we observe a good agreement between the calculated and measured phonon pressure coefficients but some particular Raman modes exhibit significant discrepancies similar to the case of wurtzite GaN and ZnO, clearly motivating the presented uniaxial pressure-dependent Raman measurements on bulk AlN crystals.

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“…Potential deformation theory asserts that displacement of the atoms in a crystal from their equilibrium positions results in a change in the interatomic potential [33]. In phonon dynamics, strain changes the interatomic force constants atoms feel at the strained equilibrium positions due to the inherent anharmonicity of the interatomic potential distribution.…”

Section: B Phonon Deformation Potentialsmentioning

confidence: 99%

Contributed Review: Experimental characterization of inverse piezoelectric strain in GaN HEMTs via micro-Raman spectroscopy

Bagnall

Wang

2016

Review of Scientific Instruments

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Micro-Raman thermography is one of the most popular techniques for measuring local temperature rise in gallium nitride (GaN) high electron mobility transistors (HEMTs) with high spatial and temporal resolution. However, accurate temperature measurements based on changes in the Stokes peak positions of the GaN epitaxial layers requires properly accounting for the stress and/or strain induced by the inverse piezoelectric effect. It is common practice to use the pinched OFF state as the unpowered reference for temperature measurements because the vertical electric field in the GaN buffer that induces inverse piezoelectric stress/strain is relatively independent of the gate bias. Although this approach has yielded temperature measurements that agree with those derived from the Stokes/anti-Stokes ratio and thermal models, there has been significant difficulty in quantifying the mechanical state of the GaN buffer in the pinched OFF state from changes in the Raman spectra. In this paper, we review the experimental technique of micro-Raman thermography and derive expressions for the detailed dependence of the Raman peak positions on strain, stress, and electric field components in wurtzite GaN. We also use a combination of semiconductor device modeling and electro-mechanical modeling to predict the stress and strain induced by the inverse piezoelectric effect. Based on the insights gained from our electromechanical model and the best values of material properties in the literature, we analyze changes in the E2 high and A1 (LO) Raman peaks and demonstrate that there are major quantitative discrepancies between measured and modeled values of inverse piezoelectric stress and strain. We examine many of the hypotheses offered in the literature for these discrepancies but conclude that 2 none of them satisfactorily resolves these discrepancies. Further research is needed to determine whether the electric field along the -axis could be affecting the phonon frequencies apart from the inverse piezoelectric effect in wurtzite GaN, which has been predicted theoretically in zinc blende gallium arsenide (GaAs).

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Piezospectroscopic study of the Raman spectrum of cadmium sulfide

Cited by 181 publications

References 31 publications

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements

Contributed Review: Experimental characterization of inverse piezoelectric strain in GaN HEMTs via micro-Raman spectroscopy

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