“…Instead, individual atomically thin layers of high crystalline quality can be integrated into a device by a simple transfer process, allowing the physical properties of the device to be accurately designed. − In the past decade, 2D materials have also had a significant impact on spintronics, a subfield of electronics where the spin degree of freedom is exploited, including demonstrations of new functionalities in magnetic tunnel junctions (MTJs). ,,− MTJs, widely used as sensors, are ferromagnet/insulator/ferromagnet (FM/I/FM) heterostructures where the nature of FM electrode/barrier interfaces is known to critically affect the central metric of device performance, its magnetoresistance (MR), in myriad of ways . For instance, if the barrier is crystalline and lattice matched with the ferromagnets, spin filtering may occur (i.e., electrons with a particular spin state are transported preferentially). ,− Alternatively, bonding or hybridization of the atomic orbitals at the FM/barrier interfaces can be the dominant factor that determines spin-dependent tunneling , while defects, impurities, and pinholes in the barrier can open additional conduction channels, modifying the MR. − Using 2D materials as an insulating barrier between the FM electrodes is of particular interest with atomically thin hexagonal boron nitride (hBN) currently being the material of choice: mono- or bilayer hBN has been shown to provide efficient spin-injection in graphene-based lateral spin-valves , and a few percent MR has been observed in MTJs with atomically thin hBN barriers. ,, …”