Platinum silicide as electrode material of microfabricated quantum electron tunneling transducers

Balan, Nikita N.; Ivashov, E. N.; Nevskii, Alexander B.

doi:10.1109/edm.2010.5568840

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2018

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“…Silicide film on silicon has received a lot of attention in the past, because the formation of self-assembled quantum wells is very specific for nanoelectronics [7][8][9][10][11][12][13][14] . However, there is practically no experimental information in the literature about quantum wells of PtSi in silicon [15][16][17][18] .…”

Section: Introductionmentioning

confidence: 99%

Self-assembled patches in PtSi/n-Si (111) diodes

et al. 2018

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Using the effect of the temperature on the capacitance–voltage (C–V) and conductance–voltage (G/ω–V) characteristics of PtSi/n-Si (111) Schottky diodes the profile of apparent doping concentration (NDapp), the potential difference between the Fermi energy level and the bottom of the conduction band (Vn), apparent barrier height (ΦBapp), series resistance (Rs) and the interface state density Nss have been investigated. From the temperature dependence of (C–V) it was found that these parameters are non-uniformly changed with increasing temperature in a wide temperature range of 79–360 K. The voltage and temperature dependences of apparent carrier distribution we attributed to the existence of self-assembled patches similar the quantum wells, which formed due to the process of PtSi formation on semiconductor and the presence of hexagonal voids of Si (111).

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