Platinum surface LEED rings

May, John W.

doi:10.1016/0039-6028(69)90227-1

Cited by 138 publications

(75 citation statements)

References 10 publications

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“…While graphene has been studied experimentally for over 40 years [1,2], worldwide interest has been generated only recently as its unique structure and excellent chemical, physical and mechanical properties have become apparent [3][4][5][6]. This has been summarized in a very recent comprehensive review of various graphene materials [1].…”

Section: Introductionmentioning

confidence: 99%

Efficient and large-scale synthesis of few-layered graphene using an arc-discharge method and conductivity studies of the resulting films

et al. 2010

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An arc-discharge method using a buffer gas containing carbon dioxide has been developed for the efficient and large-scale synthesis of few-layered graphene. The resulting samples of few-layered graphene, well-dispersed in organic solvents such as N,N-dimethylformamide (DMF) and 1,2-dichlorobenzene (o-DCB), were examined by transmission electron microscopy (TEM), X-ray diffraction (XRD), Raman spectroscopy, atomic force microscopy (AFM), and thermal gravimetric analysis (TGA). The electrical conductivity and transparency of flexible films prepared using a direct solution process have also been studied.

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Section: Introductionmentioning

confidence: 99%

Efficient and large-scale synthesis of few-layered graphene using an arc-discharge method and conductivity studies of the resulting films

et al. 2010

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“…3 Typical templates include Ni(111), [4][5][6][7] Ru(0001), [8][9][10][11][12][13][14][15][16][17] Ir(111) [18][19][20][21][22][23][24] and Pt(111). [25][26][27][28][29][30][31] The latter three surfaces are not well lattice-matched to graphene. Because of this mismatch and the strong C-C bonding within the graphene sheet, the metal lattice and the graphene lattice form moiré structures.…”

Section: Introductionmentioning

confidence: 99%

Defects of graphene on Ir(111): Rotational domains and ridges

et al. 2009

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We use low-energy electron microscopy (LEEM), low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM) to study different orientations of single-layer graphene sheets on Ir(111). The most-abundant orientation has previously been characterized in the literature. Using selective-area LEED we find three other variants, which are rotated 14°, 18.5° and 30° with respect to the most common variant. The "30°-rotated structure is also studied by STM. We propose that all 4 variants are moiré structures that can be classified using simple geometric rules involving periodic and quasi-periodic structural motifs. In addition, LEEM reveals that linear defects form in the graphene sheets during cooling from the synthesis temperature. STM shows that these defects are ridges, suggesting that the graphene sheets delaminate locally as the Ir substrate contracts.

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“…Although it is important to acknowledge the contributions of other research groups into the development of this area of physics, whose work determined the occurrence of a variety of methods for the synthesis of graphene (molecular beam epitaxy, MOCVD, high-temperature sublimation, intercalation) and created the conditions for the implementation of its exotic properties. In particular, the initial evidences of graphene were firstly reported a few decades ago by Morgan et al [11], May [12], Shelton et al. [13] and Van Bommel et al [14].…”

Section: Introduction To Graphenementioning

confidence: 99%

Combining graphene with silicon carbide: synthesis and properties – a review

Shtepliuk

Khranovskyy

Yakimova

2016

Semicond. Sci. Technol.

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Being a true two-dimensional crystal, graphene possesses a lot of exotic properties that would enable unique applications. Integration of graphene with inorganic semiconductors, e.g. SiC promotes the birth of a class of hybrid materials which are highly promising for development of novel operations, since they combine the best properties of two counterparts in the frame of one hybrid platform. As a specific heterostructure, graphene on SiC performs strongly dependent on the synthesis method and the growth modes.In this paper a comprehensive review of the most relevant studies of graphene growth methods and mechanisms on SiC substrates has been carried out. The aim is to elucidate the basic physical processes that are responsible for the formation of graphene on SiC.First, an introduction is made covering some intriguing and not so often discussed properties of graphene. Then, we focus on integration of graphene with SiC which is facilitated by the nature of SiC to assume graphitization. As concerning the synthesis methods we discuss thermal decomposition of SiC, chemical vapor deposition and molecular beam epitaxy stressing that the first technique is the most common one when SiC substrates are used. In addition, we briefly appraise graphene synthesis via metal mediated carbon segregation.We address in detail the main aspects of the substrate effect such as substrate face polarity, offcut, kind of polytype and nonpolar surfaces on the growth of graphene layers. A comparison of graphene grown on the polar faces is made. In particular, growth of graphene on Si-face SiC is critically analyzed concerning growth kinetics and growth mechanisms taking into account the specific characteristics of SiC (0001) surfaces, such as the step-terrace structure and the unavoidable surface reconstruction upon heating. In all subtopics obstacles and solutions are featured. We complete the review with a short summary and concluding remarks. Outline

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Platinum surface LEED rings

Cited by 138 publications

References 10 publications

Efficient and large-scale synthesis of few-layered graphene using an arc-discharge method and conductivity studies of the resulting films

Efficient and large-scale synthesis of few-layered graphene using an arc-discharge method and conductivity studies of the resulting films

Defects of graphene on Ir(111): Rotational domains and ridges

Combining graphene with silicon carbide: synthesis and properties – a review

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