(Plenary) Substrate Innovation for Extending Moore and More than Moore Law

Abstract

Within last 10 years, end markets drastically changed towards mobile connected users. With 8B smartphones to be shipped next 4 years, typical performance/cost KPIs have been evolved towards more demanding PPAC metrics adding power consumption (battery life) and area (from factors) constraints. In this effort to bring more performance, less power or more functionality, innovation or evolution starting from substrates has demonstrated significant successes, such as FDSOI for extension of Moore's law beyond 28nm node. In the field of front end modules (FEM) for smartphones, switch, previously built on AsGa substrates, are now built on RFSOI substrates. Compared to 150mm AsGa wafers, 200mm RFSOI wafers are silicon family wafers and FEM switch are now built in large volume in most foundries, offering very significant die cost advantage. This example can be reproduced for many other application fields or device options where substrate innovation is supporting major improvements. Device scaling: Entering the substrate eraDevice scaling has been since long following so-called Moore's law, doubling transistor density every 2 years, bringing more performance to users with cost improvements. Figure 1 is describing how this was accomplished thru scaling innovation, then material innovation phase. Third phase, labeled as structure innovation in figure 1, is bringing 2 different options: while 1 st option is introducing FinFET, 2nd option relies on FDSOI devices. Figure 1. Technology migration history (1) 10.1149/06605.0013ecst ©The Electrochemical Society ECS Transactions, 66 (5) 13-23 (2015) 13 ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-05-27 to IP