Polarisation analysing complementary metal‐oxide semiconductor image sensor in 65‐nm standard CMOS technology

[Paper] Demonstrations of Polarization Imaging Capability and Novel Functionality of Polarization-Analyzing CMOS Image Sensor with 65 nm Standard CMOS Process

“…The effect of the guard ring voltage has been presented in ref. 13. In this work, we apply 3.3 V to obtain maximum electron collection effect.…”

“…Introducing the pixel into an array, a crosstalk between neighboring pixels should be considered. In order to characterize the inter-pixel crosstalk, we performed a single-pixel illumination and measured the signal around the illuminated pixel 13) . The light intensity observed in the adjacent un-illuminated pixel is understood as an artifact caused by the inter-pixel crosstalk.…”

“…Fig. 8 shows signal level of the inter-pixel crosstalk as a function of the pixel distance 13) . The values were normalized with the signal when the pixel was directly illuminated.…”

“…Although the inter-pixel crosstalk is not negligible, the polarization-separation performance of 15.0 dB is expected in imaging mode. We have reported that an image taken through an external polarizer shows a stripe-like feature depending on the relative angle between on-pixel polarizer and the external polarizer 13) .…”

A 220 × 128 120 mW 60 frames/s current mode polarization imager for in vivo optical neural recording

“…High polarization selectivity is desirable for neural recording. Hence, designing polarization filters out of the metal layers in a CMOS process is not desirable since it will lead to low extinction ratios [8]. The output and the reset voltage bus are shared together to minimize the numbers of buses in the pixel.…”