Polycrystalline CdSe films for thin film transistors

Calster, André Van; Vervaet, Alfons; Rycke, I. De; Baets, Johan De; Vanfleteren, Jan

doi:10.1016/0022-0248(90)90826-7

Cited by 70 publications

(23 citation statements)

References 3 publications

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“…CdSe is an important II-VI semiconductor compound martial with potential applications in low cost electronic and optoelectronics devices such as solar cell [1], photoconductors [2], thin film transistors [3], light emitting diodes [4], biomedical imaging devices [5] and laser diodes [6]. It is a narrow band semiconductor and its band gap energy is found to be 1.74 [7].…”

Section: Introductionmentioning

confidence: 99%

Influence of heat treatment on the structural, optical and electrical properties of Cd20Sn10Se70 thin films

Abdelgaied

Mahfoz-Kotb

Hafiz

et al. 2015

Materials Science in Semiconductor Processing

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Section: Introductionmentioning

confidence: 99%

Influence of heat treatment on the structural, optical and electrical properties of Cd20Sn10Se70 thin films

Abdelgaied

Mahfoz-Kotb

Hafiz

et al. 2015

Materials Science in Semiconductor Processing

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“…Cadmium selenide (Eg = 1⋅7 eV) is one of the promising semiconducting materials that has been studied for application in solar cells (Richter 1988), γ-ray detectors (Roth 1989), thin film transistors (Van Calster et al 1988) etc. Freshly deposited thin films may contain many defects such as voids, pinholes etc.…”

Section: Introductionmentioning

confidence: 99%

Structural and optical properties of electron beam evaporated CdSe thin films

et al. 2007

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Thin films of cadmium selenide (CdSe) as a semiconductor is well suited for opto-electronic applications such as photo detection or solar energy conversion, due to its optical and electrical properties, as well as its good chemical and mechanical stability. In order to explore the possibility of using this in optoelectronics, a preliminary and thorough study of optical and structural properties of the host material is an important step. Based on the above view, the structural and optical properties of CdSe films have been studied thoroughly in the present work. The host material, CdSe film, has been prepared by the physical vapour deposition method of electron beam evaporation (PVD: EBE) technique under a pressure of 5 × 10 -5 mbar. The structural properties have been studied by XRD technique. The hexagonal structure with a preferred orientation along the (0 0 2) direction of films has been confirmed by the X-ray diffraction analysis. The films have been analysed for optical band gap and absorbed a direct intrinsic band gap of 1⋅92 eV.

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“…It is used as thin film transistors, sensors, lasers, photoluminescence and optoelectronic devices in photoconductive and photovoltaic cells [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. The nano-crystalline CdSe material is also used as photo-electrode in photo-electrochemical cell [15].…”

Section: Introductionmentioning

confidence: 99%