Polydimethylglutarimide (PMGI) Resist - A Progress Report

McCullough, A. W.; Vidusek, David A.; Legenza, M. W.; Grandpre, M. de; Imhof, Joseph

doi:10.1117/12.963658

Cited by 7 publications

(5 citation statements)

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“…To perform CIDER CNT transfer, the target substrate is first prepared by depositing an ultra-thin (~7 nm) sacrificial polymer layer (PMGI-based DUV photoresist) [16]. A CNT single transfer is performed onto this polymer surface, using a gold/thermal release tape stack to transfer the CNTs from the growth substrate to the target substrate (Fig.…”

Section: Cider Process Flowmentioning

confidence: 99%

High-performance carbon nanotube field-effect transistors

Shulaker

Pitner

Hills

et al. 2014

2014 IEEE International Electron Devices Meeting

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Section: Cider Process Flowmentioning

confidence: 99%

High-performance carbon nanotube field-effect transistors

Shulaker

Pitner

Hills

et al. 2014

2014 IEEE International Electron Devices Meeting

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“…PMGI has also been patterned using electron-beam 5,6 and proton beam exposure. 12 Because PMGI is insoluble in the casting solvents used by most Novolac photoresist formulations, [13][14][15][16][17] PMGI is often used for bilayer lift-off processes. This resist can be patterned with submicrometer feature sizes, and, depending on formulation, has a glass transition temperature between 180 and 190°C.…”

Section: Introductionmentioning

confidence: 99%

Exposure and development of thick polydimethylglutarimide films for MEMS applications using 254-nm irradiation

Foulds

Johnstone

Tsang

et al. 2008

J. Micro/Nanolith. MEMS MOEMS

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Polydimethylglutarimide ͑PMGI͒-based resists are finding increasing use in microelectromechanical systems ͑MEMS͒ as both sacrificial and structural materials. PMGI-based resists are commercially available and were originally designed for use in bilayer lift-off applications. Literature on deep-UV exposure and development of PMGI films is limited to films less than 2.5 m in thickness, and use only tetramethylammonium hydroxide ͑TMAH͒-based developers. We investigate the exposure and development of PMGI films greater than 6 m in thickness using the two main classes of developer for PMGI, TMAH, and tetraethylammonium hydroxide ͑TEAH͒-based developers. At these thicknesses, a nonuniform dose through the film due to the optical absorption of the PMGI leads to large gradients in the dissolution properties. We report etch rates as a function of surface dose and development time. Additionally a model is developed to provide a basic predictor of development depth and other important data for fabrication process planning and development.

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“…Poly͑dimethylglutarimide͒ ͑PMGI͒ is a resist that is commonly used in bilayer [1][2][3][4][5][6][7][8][9][10][11] and trilayer [12][13][14] imaging applications. For example, PMGI can be used to create lift-off profiles with thicknesses greater than 10 m. 8 In addition to being used as a resist, PMGI has also been used as an optical material in microfabricated optical devices [15][16][17] and as both a structural layer and a sacrificial layer in surface micromachining.…”

Section: Introductionmentioning

confidence: 99%

Isopropanol/water as a developer for poly(dimethylglutarimide)

Johnstone

Foulds

Pallapa

et al. 2008

J. Micro/Nanolith. MEMS MOEMS

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Poly͑dimethylglutarimide͒ ͑PMGI͒ is a resist that is commonly used in bilayer and trilayer imaging applications. PMGI can be exposed using various radiation sources including deep UV. Currently, there are only two developers for PMGI reported in the literature: tetramethylammonium hydroxide and tetraethylammonium hydroxide. We introduce a new developer for PMGI, a mixture of isopropanol ͑IPA͒ and water. Samples were irradiated with deep UV at 254 nm. The IPA/water developer exhibits rapid dissolution of exposed PMGI, of many microns per minute. However, PMGI exhibits high absorption at 254 nm, so the development depth is limited. The depth limit, after a critical dose, increases linearly with the exposure dose. © 2008 Society of Photo-Optical Instrumentation Engineers.

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Polydimethylglutarimide (PMGI) Resist - A Progress Report

Cited by 7 publications

References 0 publications

High-performance carbon nanotube field-effect transistors

High-performance carbon nanotube field-effect transistors

Exposure and development of thick polydimethylglutarimide films for MEMS applications using 254-nm irradiation

Isopropanol/water as a developer for poly(dimethylglutarimide)

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