Population inversion X-ray Laser Oscillator at LCLS

Halavanau, Aliaksei; Fuller, Franklin D.; Kröll, Thomas; Lutman, Alberto; Aquila, Andrew; Decker, F.J.; Pellegrini, C.; Welke, N.; R., Ash,; Bergmann, Uwe; Benediktovitch, Andrei; Rohringer, Nina; Krušič, Špela; Doyle, Margaret; P., Manwani,; Majernik, Nathan; Rosenzweig, James

doi:10.1364/euvxray.2022.ef5a.2

Cited by 1 publication

(1 citation statement)

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“…The XRAFEL is an example of a burgeoning new class of cavity-based X-ray freeelectron lasers. This subfield has seen intense recent activity in both the theoretical [87] and experimental [84] arenas discussed here [88]. The XRAFEL itself has a high priority, as there is significant motivation in the field to search for XFEL solutions with very high peak and average-power X-ray, having enhanced coherence.…”

Section: X-ray Regenerative Amplifier Fel Performancementioning

confidence: 99%

A High-Flux Compact X-ray Free-Electron Laser for Next-Generation Chip Metrology Needs

Rosenzweig,

Andonian,

Agustsson

et al. 2024

Instruments

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Recently, considerable work has been directed at the development of an ultracompact X-ray free-electron laser (UCXFEL) based on emerging techniques in high-field cryogenic acceleration, with attendant dramatic improvements in electron beam brightness and state-of-the-art concepts in beam dynamics, magnetic undulators, and X-ray optics. A full conceptual design of a 1 nm (1.24 keV) UCXFEL with a length and cost over an order of magnitude below current X-ray free-electron lasers (XFELs) has resulted from this effort. This instrument has been developed with an emphasis on permitting exploratory scientific research in a wide variety of fields in a university setting. Concurrently, compact FELs are being vigorously developed for use as instruments to enable next-generation chip manufacturing through use as a high-flux, few nm lithography source. This new role suggests consideration of XFELs to urgently address emerging demands in the semiconductor device sector, as identified by recent national need studies, for new radiation sources aimed at chip manufacturing. Indeed, it has been shown that one may use coherent X-rays to perform 10–20 nm class resolution surveys of macroscopic, cm scale structures such as chips, using ptychographic laminography techniques. As the XFEL is a very promising candidate for realizing such methods, we present here an analysis of the issues and likely solutions associated with extending the UCXFEL to harder X-rays (above 7 keV), much higher fluxes, and increased levels of coherence, as well as methods of applying such a source for ptychographic laminography to microelectronic device measurements. We discuss the development path to move the concept to rapid realization of a transformative XFEL-based application, outlining both FEL and metrology system challenges.

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Section: X-ray Regenerative Amplifier Fel Performancementioning

confidence: 99%