Positive Ion Emission from Excimer Laser Excited MgO Surfaces

Dickinson, J. T.; Langford, S. C.; Shin, Jaw‐Jung; Doering, D. L.

doi:10.1103/physrevlett.73.2630

Cited by 89 publications

(39 citation statements)

References 10 publications

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“…The high order nonlinear dependence is a typical signature of the multiphoton ejection process. 36 The second regime, which starts after melting, shows a near linear Si + abundance variation versus fluence, thus confirming the thermal nature of the low energy population.…”

Section: Methodsmentioning

confidence: 50%

“…Such a behavior is typical of photoinduced, nonthermal desorption-ablation. 36,37 The subsequent increase in laser fluence above F 0th leads to a broadening of the Si + TOF distribution ͑see Fig. 1, fluence of 0.42 J / cm 2 ͒ and to the formation of a well pronounced low energy distribution starting from 0.7 to 0.8 J / cm 2 ͑onset of thermal ablation͒.…”

Section: Methodsmentioning

confidence: 99%

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Insight into electronic mechanisms of nanosecond-laser ablation of silicon

Marine

Bulgakova

Patrone

et al. 2008

Journal of Applied Physics

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To cite this version:Wladimir Marine, N.M. Bulgakova, Lionel Patrone, Igor Ozerov. Insight into electronic mechanisms of nanosecond-laser ablation of silicon. We present experimental and theoretical studies of nanosecond ArF excimer laser desorption and ablation of silicon with insight into material removal mechanisms. The experimental studies involve a comprehensive analysis of the laser-induced plume dynamics and measurements of the charge gained by the target during irradiation time. At low laser fluences, well below the melting threshold, high-energy ions with a narrow energy distribution are observed. When the fluence is increased, a thermal component of the plume is formed superimposing on the nonthermal ions, which are still abundant. The origin of these ions is discussed on the basis of two modeling approaches, thermal and electronic, and we analyze the dynamics of silicon target excitation, heating, melting, and ablation. An electronic model is developed that provides insight into the charge-carrier transport in the target. We demonstrate that, contrary to a commonly accepted opinion, a complete thermalization between the electron and lattice subsystems is not reached during the nanosecond-laser pulse action. Moreover, the charging effects can retard the melting process and have an effect on the overall target behavior and laser-induced plume dynamics.

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Section: Methodsmentioning

confidence: 50%

Section: Methodsmentioning

confidence: 99%

Insight into electronic mechanisms of nanosecond-laser ablation of silicon

Marine

Bulgakova

Patrone

et al. 2008

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…1, the TOF spectrum consists of an only population of Si + ions. The spatial distribution of this kind of ions is narrow, strongly peaked relatively to the target normal and, up to the melting threshold, the kinetic energy (∼ 4.8 − 5 eV) is a weak function of laser fluence that is typical for non-thermal desorption/ablation [3,12].…”

Section: Methodsmentioning

confidence: 99%

“…, that is a typical feature of the multi-particle ejection process [3]. The second regime, starting after melting, shows near-linear Si + abundance variation with fluence.…”

mentioning

confidence: 99%

“…For nanosecond laser pulses, it is generally accepted that the ablation mechanism of normal vaporization gives way to phase explosion with increasing laser fluence [1]. At low laser fluences near ablation threshold, electronic mechanism of high-energy ion emission has been proven to play a role in initiating the ablation process, mainly for dielectrics and semiconductors [2,3]. For ultrashort laser pulses, the electronic mechanisms of desorption [4] and ablation [5,6] for both dielectric and semiconductor targets are studied extensively, whereas for nanosecond pulses there is a lack of both the experimental and theoretical analyses.…”

Section: Introductionmentioning

confidence: 99%

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Electronic mechanism of ion expulsion under UV nanosecond laser excitation of silicon: Experiment and modeling

et al. 2004

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We present experimental and modeling studies of UV nanosecond pulsed laser desorption and ablation of (111) bulk silicon. The results involve a new approach to the analysis of plume formation dynamics under high-energy photon irradiation of the semiconductor surface. Non-thermal, photoinduced desorption has been observed at low laser fluence, well below the melting threshold. Under ablation conditions, the non-thermal ions have also a high concentration. The origin of these ions is discussed on the basis of electronic excitation of Si surface states associated with the Coulomb explosion mechanism. We present a model describing dynamics of silicon target excitation, heating and charge-carrier transport.

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