Possibilities of Digital Optical Microscopy for Objective Certification of the Quality of Metalware

Kudrya, A. V.; Sokolovskaya, E. A.; Скородумов, С. В.; Trachenko, V. A.; Papina, K. B.

doi:10.1007/s11041-018-0263-9

Cited by 4 publications

(2 citation statements)

References 1 publication

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“…Potential solution to this problem can be qualitative metallography based on the measurement of the number of structural features in digital images (in the form of pixel intensity matrices, or the image brightness field) [14,15]. This approach allows one to analyze individual frames or their panoramic clips on a specimen (product) scale, e.g.…”

Section: Selective Etching Methodsmentioning

confidence: 99%

“…During the formation of a panoramic image (clipping of single frames), a frequent occurrence is a dark "grid" forming at superimpositions of individual frames and potentially causing errors to the overall pixel intensity matrix for the whole panoramic image. Correction of these defects often requires deep understanding of the nature of the test object and the role of individual structural components in the formation of its properties [14].…”

Section: Selective Etching Methodsmentioning

confidence: 99%

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Methods of dislocation structure characterization in A IIIB V semiconductor single crystals

Knyazev¹,

Kudrya

Komarovskiy³

et al. 2022

MoEM

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The development pace of advanced electronics raises the demand for semiconductor single crystals and strengthens the requirements to their structural perfection. Dislocation density and distribution pattern are most important parameters of semiconductor single crystals which determine their performance as integrated circuit components. Therefore studies of the mechanisms of dislocation nucleation, slip and distribution are among the most important tasks which make researchers face the choice of suitable analytical methods. This work is an overview of advanced methods of studying and evaluating dislocation density in single crystals. Brief insight has been given on the main advantages and drawbacks of the methods overviewed and experimental data have been presented. The selective etching method (optical light microscopy) has become the most widely used one and in its conventional setup is quite efficient in the identification of scrap defects and in dislocation density evaluation by number of etch pits per vision area. Since the introduction of digital light microscopy and the related transfer from image analysis to pixel intensity matrices and measurement automation, it has become possible to implement quantitative characterization for the entire cross-section of single crystal wafers and analyze structural imperfection distribution pattern. X-ray diffraction is conventionally used for determination of crystallographic orientation but it also allows evaluating dislocation density by rocking curve broadening in double-crystal setup. Secondary electron scanning electron microscopy and atomic force microscopy allow differentiating etch patterns by origin and studying their geometry in detail. Transmission electron microscopy and induced current method allow obtaining micrographs of discrete dislocations but require labor-consuming preparation of experimental specimens. X-ray topography allows measuring bulky samples and also has high resolution but is hardly suitable for industry-wide application due to the high power consumption of measurements. Digital image processing broadens the applicability range of basic dislocation structure analytical methods in materials science and increases the authenticity of experimental results.

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Section: Selective Etching Methodsmentioning

confidence: 99%

Section: Selective Etching Methodsmentioning

confidence: 99%

Methods of dislocation structure characterization in A IIIB V semiconductor single crystals

Knyazev¹,

Kudrya

Komarovskiy³

et al. 2022

MoEM

View full text Add to dashboard Cite

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Influence of Technological Parameters during Multiwire Cutting of GaAs Ingots on the Surface Characteristics of the Plates

Podgorny,

Nestyurkin,

Komarovskiy

2023

Russ Microelectron

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Methods of dislocation structure characterization in AIIIBV semiconductor single crystals

Knyazev

Kudrya

Komarovskiy

et al. 2023

Izv. vysš. učebn. zaved., Mater. èlektron. teh.

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The development pace of advanced electronics raises the demand for semiconductor single crystals and strengthens the requirements to their structural perfection. Dislocation density and distribution pattern are most important parameters of semiconductor single crystals which determine their performance as integrated circuit components. Therefore studies of the mechanisms of dislocation nucleation, slip and distribution are among the most important tasks which make researchers face the choice of suitable analytical methods. This work is an overview of advanced methods of studying and evaluating dislocation density in single crystals. Brief insight has been given on the main advantages and drawbacks of the methods overviewed and experimental data have been presented. The selective etching method (optical light microscopy) has become the most widely used one and in its conventional setup is quite efficient in the identification of scrap defects and in dislocation density evaluation by number of etch pits per vision area. Since the introduction of digital light microscopy and the related transfer from image analysis to pixel intensity matrices and measurement automation, it has become possible to implement quantitative characterization for the entire cross-section of single crystal wafers and analyze structural imperfection distribution pattern. X-ray diffraction is conventionally used for determination of crystallographic orientation but it also allows evaluating dislocation density by rocking curve broadening in double-crystal setup. Secondary electron scanning electron microscopy and atomic force microscopy allow differentiating etch patterns by origin and studying their geometry in detail. Transmission electron microscopy and induced current method allow obtaining micrographs of discrete dislocations but require labor-consuming preparation of experimental specimens. X-ray topography allows measuring bulky samples and also has high resolution but is hardly suitable for industry-wide application due to the high power consumption of measurements.Digital image processing broadens the applicability range of basic dislocation structure analytical methods in materials science and increases the authenticity of experimental results.

show abstract

Possibilities of Digital Optical Microscopy for Objective Certification of the Quality of Metalware

Cited by 4 publications

References 1 publication

Methods of dislocation structure characterization in A IIIB V semiconductor single crystals

Methods of dislocation structure characterization in A IIIB V semiconductor single crystals

Influence of Technological Parameters during Multiwire Cutting of GaAs Ingots on the Surface Characteristics of the Plates

Methods of dislocation structure characterization in AIIIBV semiconductor single crystals

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