Possible strain induced Mott gap collapse in 1T-TaS2

Bu, Kunliang; Zhang, Wenhao; Fu, Ying; Wu, Zongxiu; Zheng, Yuan; Gao, Jingjing; Sun, Yan; Yin, Yi

doi:10.1038/s42005-019-0247-0

Cited by 37 publications

(26 citation statements)

References 51 publications

(84 reference statements)

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“…To explore more details about the metallic phase, we present a modulated electronic state for the metallic phase. Previously we have found a corrugation-induced Mott-gap-collapse in 1T-TaS 2 [26]. The upper panel of Fig.…”

Section: Coherent Peaks Of the Metallic Statementioning

confidence: 66%

“…In the cuprate superconductor, a V-shape spectrum represents a metallic pseudogap (PG) state evolved from the Mott insulating state [32,33]. Different from the previous Mottgap-collapse in corrugated area of 1T-TaS 2 [26], here the corrugation effectively strengthens the V-shape gap size and depth. The continuous adjustment of the electronic state is possibly either from a local buckling effect or the change of interlayer distance, which is still an open question.…”

Section: Coherent Peaks Of the Metallic Statementioning

confidence: 89%

“…1(c), there is an asymmetric DOS distribution and a weak dip around the Fermi level. In contrast, the most metallic dI/dV spectra in 1T -TaS 2 display symmetric V-shape DOS near the Fermi level [26,28,29]. The asymmetric DOS can be possibly explained by higher p-derived valence bands of Se and possible p-d hybridization in 1T -TaSe 2 [21,22].…”

Section: Coherent Peaks Of the Metallic Statementioning

confidence: 93%

“…The LHB and UHB peaks are located at −300 and 230 mV. The gap size is around 530 mV, about 100 mV larger than that of bulk 1T-TaS 2 [25,26]. The CDW valley roughly at 400 mV shows an approximate zero value, suggesting a strong CDW modulation in 1T-TaSe 2 [17].…”

Section: A Insulating and Metallic Electronic Spectramentioning

confidence: 99%

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Reconciling the bulk metallic and surface insulating state in 1T−TaSe2

Zhang

et al. 2022

Phys. Rev. B

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The transition metal dichalcogenides 1T -TaS2 and 1T -TaSe2 have been extensively studied for the complicated correlated electronic properties. The origin of different surface electronic states remains controversial. We apply scanning tunneling microscopy and spectroscopy to restudy the surface electronic state of bulk 1T -TaSe2. Both insulating and metallic states are identified in different areas of the same sample. The insulating state is similar to that in 1T -TaS2, concerning both the dI/dV spectrum and the orbital texture. With further investigations on single-step areas, the discrepancy of electronic states is found to be associated with different stacking orders. The insulating state is most possibly a single layer property, modulated to a metallic state in some particular stacking orders. The metallic spectrum and corresponding stacking orders are dominant in 1T-TaSe2, consistent with the metallic transport measurement. We then reconcile the bulk metallic and surface insulating state in 1T -TaSe2. The rich phenomena in 1T -TaSe2 deepens our understanding of the correlated electronic state on bulk 1T -TaSe2 and 1T -TaS2.

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Section: Coherent Peaks Of the Metallic Statementioning

confidence: 66%

Section: Coherent Peaks Of the Metallic Statementioning

confidence: 89%

Section: Coherent Peaks Of the Metallic Statementioning

confidence: 93%

Section: A Insulating and Metallic Electronic Spectramentioning

confidence: 99%

See 2 more Smart Citations

Reconciling the bulk metallic and surface insulating state in 1T−TaSe2

Zhang

et al. 2022

Phys. Rev. B

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“…The ability to tune these phases is the key feature to better understanding their nature, e.g., as in a recent gate-induced experiment on few layers of the 1T-TiSe 2 4 , which remarkably showed the occurrence of a Kosterlitz-Thouless phase transition. In view of this, a great experimental effort has been done to characterize these compounds by different external parameters: by changing the number of (chalcogenmetal-chalcogen) layers, chemical doping/intercalation, strain or hydrostatic pressure [5][6][7][8][9][10] . Interestingly, the suppression of the CDW phase, for most of the cases, is followed by the appearance of a superconducting dome around the critical point, resembling the phase diagrams of heavy fermion materials or doped cuprates 11 .…”

Section: Introductionmentioning

confidence: 99%

The two-dimensional $t$-$t^{\prime}$ Holstein model

Araújo,

de Lima,

Sorella

et al. 2021

Preprint

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The competition and interplay between charge-density wave and superconductivity have become a central subject for quasi-2D compounds. Some of these materials, such as the transition-metal dichalcogenides, exhibit strong electron-phonon coupling, an interaction that may favor both phases, depending on the external parameters, such as hydrostatic pressure. In view of this, here we analyze the single-band t-t Holstein model in the square lattice, adding a next-nearest neighbor hopping t in order to play the role of the external pressure. To this end, we perform unbiased quantum Monte Carlo simulations with an efficient inversion sampling technique appropriately devised for this model. Such a methodology drastically reduces the autocorrelation time, and increases the efficiency of the Monte Carlo approach. By investigating the charge-charge correlation functions, we obtain the behavior of the critical temperature as a function of t , and from compressibility analysis, we show that a first-order metal-to-insulator phase transition occurs. We also provide a low-temperature phase diagram for the model.

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Multiple Electronic Phases Coexisting under Inhomogeneous Strains in the Correlated Insulator

Hou

Zhang

et al. 2023

Advanced Science

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Monolayer transition metal dichalcogenides (TMDs) can host exotic phenomena such as correlated insulating and charge‐density‐wave (CDW) phases. Such properties are strongly dependent on the precise atomic arrangements. Strain, as an effective tuning parameter in atomic arrangements, has been widely used for tailoring material's structures and related properties, yet to date, a convincing demonstration of strain‐induced dedicate phase transition at nanometer scale in monolayer TMDs has been lacking. Here, a strain engineering technique is developed to controllably introduce out‐of‐plane atomic deformations in monolayer CDW material 1T‐NbSe2. The scanning tunneling microscopy and spectroscopy (STM and STS) measurements, accompanied by first‐principles calculations, demonstrate that the CDW phase of 1T‐NbSe2 can survive under both tensile and compressive strains even up to 5%. Moreover, significant strain‐induced phase transitions are observed, i.e., tensile (compressive) strains can drive 1T‐NbSe2 from an intrinsic‐correlated insulator into a band insulator (metal). Furthermore, experimental evidence of the multiple electronic phase coexistence at the nanoscale is provided. The results shed new lights on the strain engineering of correlated insulator and useful for design and development of strain‐related nanodevices.

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Possible strain induced Mott gap collapse in 1T-TaS2

Cited by 37 publications

References 51 publications

Reconciling the bulk metallic and surface insulating state in 1T−TaSe2

Reconciling the bulk metallic and surface insulating state in 1T−TaSe2

The two-dimensional $t$-$t^{\prime}$ Holstein model

Multiple Electronic Phases Coexisting under Inhomogeneous Strains in the Correlated Insulator

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