Post-depositional diamond etching

Bachmann, Peter K.; Leers, D.; Wiechert, Detlef

doi:10.1016/0925-9635(93)90204-f

Cited by 50 publications

(4 citation statements)

References 9 publications

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“…However, for larger Ar fractions the variation is not very pronounced. Previously several groups removed the sp 2 phases from the deposited DLC films either by etching in oxygen plasma or by using chemical process (for example, by dipping the film in a solution of Cr 2 O 3 + H 2 SO 4 at 445 K followed by rinsing in H 2 O 2 + 30% NH 4 OH) [5,14,15]. This removal or destruction of sp 2 phases resulted in a sharper absorption edge in the optical spectra, as well as substantial increase in the bandgap and film hardness.…”

Section: Resultsmentioning

confidence: 99%

Effects of Ar Gas Dilution in Methane Plasma on the Properties of Diamond-like Carbon Films

Chakrabarti

Kim

Wilson

et al. 2002

phys. stat. sol. (a)

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Diamond‐like carbon films have been deposited with different amounts of Ar gas dilution of a methane precursor by the radio frequency plasma enhanced chemical vapor deposition technique. The object of this work is to study the effects of Ar dilution on the film properties. Optical, IR and Raman spectroscopy, along with hardness tests, have been performed for this purpose. The optical bandgap, hardness and the integrated intensity ratio (ID/IG) of the Raman D‐line and the G‐line, respectively, tend to increase with increasing Ar fraction in the precursor gas mixture. FTIR spectra show that the amount of hydrogen in the films reduces with increasing Ar dilution. All these results show that the sp3 fraction in the films increases with increasing Ar fraction in the precursor. Results of different tests have been correlated with each other and possible explanations have been discussed.

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Section: Resultsmentioning

confidence: 99%

Effects of Ar Gas Dilution in Methane Plasma on the Properties of Diamond-like Carbon Films

Chakrabarti

Kim

Wilson

et al. 2002

phys. stat. sol. (a)

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“…Electron beam damage (or restructuring) is a common phenomenon encountered in materials, such as carbon whose defect structure and bond hybridization can be altered by electron irradiation. − It is well-known (from plasma and thermal etching studies) that the bond hybridization and defect structure − of carbon affect the surface volatilization efficiency. It is therefore reasonable to expect the EBIE efficiency of such materials to change with time as an electron beam creates surface defects during etching.…”

Section: Introductionmentioning

confidence: 99%

Dynamic Surface Site Activation: A Rate Limiting Process in Electron Beam Induced Etching

Martin

Phillips

Toth

2013

ACS Appl. Mater. Interfaces

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We report a new mechanism that limits the rate of electron beam induced etching (EBIE). Typically, the etch rate is assumed to scale directly with the precursor adsorbate dissociation rate. Here, we show that this is a special case, and that the rate can instead be limited by the concentration of active sites at the surface. Novel etch kinetics are expected if surface sites are activated during EBIE, and observed experimentally using the electron sensitive material ultra nanocrystalline diamond (UNCD). In practice, etch kinetics are of interest because they affect resolution, throughput, proximity effects, and the topography of nanostructures and nanostructured devices fabricated by EBIE.

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“…The dependence of the I diamond ͞ I non-diamond ratio on the methane content in the reaction mixture is displayed in Fig. 15,36,37 Therefore the films with smaller grain size (and, consequently, with larger area of grain boundaries) would have higher content of non-diamond carbon. The ratio drops sharply with methane increase from 3% to 5%, then decreases slowly at higher percentages.…”

Section: Raman Spectroscopymentioning

confidence: 99%

Structural studies of diamond thin films grown from dc arc plasma

et al. 1997

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Diamond thin films grown from a dc-arc discharge in CH 4 ͞H 2 mixtures on Si wafers were examined by transmission electron microscopy and Raman spectroscopy. This deposition method provides good diamond crystallinity at high CH 4 concentrations (3% -9%). Seeding the substrate with 5 nm diamond particles at a density of 2 3 10 12 cm 21 followed by argon laser irradiation to reduce their agglomeration gives, just after starting deposition, a density of growth centers of 10 10 cm 22 . At 3% CH 4 concentration the film grows with almost perfect crystallites. Richer CH 4 mixtures (5% and 9%) produce crystallites with twins and stacking faults. An amorphous 20 -70 nm SiC interlayer is present at these CH 4 concentrations, which was not observed at 3% CH 4 . Amorphous sp 3 -and sp 2 -bonded carbon was detected by Raman spectroscopy at all CH 4 concentrations and correlated with TEM data.

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Post-depositional diamond etching

Cited by 50 publications

References 9 publications

Effects of Ar Gas Dilution in Methane Plasma on the Properties of Diamond-like Carbon Films

Effects of Ar Gas Dilution in Methane Plasma on the Properties of Diamond-like Carbon Films

Dynamic Surface Site Activation: A Rate Limiting Process in Electron Beam Induced Etching

Structural studies of diamond thin films grown from dc arc plasma

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