Power and linearity performance of a cascode InGaP/GaAs HBT distributed amplifier for instrument applications

High‐efficiency tapered distributed power amplifier with 2‐μm GaAs HBT process

“…Here, the cutoff frequency f T is introduced in FOM to represent the technology used. Table 1 gives the performance comparison with the state-ofthe-art using the different technologies in recent 5 years [11][12][13][14][15][16]. From the table, we can see that our work has a high FOM considering the trade-off among the gain, bandwidth, dc power, P 1dB and f T .…”

An Investigation of Tradeoff Options for the Improvement of Spurious-Free Dynamic Range in HBT Transimpedance Distributed Amplifiers

“…Changing the amplifier load from 50 Ω to 23.19 Ω and accordingly adjusting all elements of the distributed amplifier circuit (such as the output line inductance L d , input line inductance L g , the input line termination, Z 0g , etc.) results in the value of Z L,4 to change from 30.70 + j46.12 Ω to 31.22 + j21.75 Ω according to (5). As we can see from Figure 4, this causes Z L,4 to move to a location on the Smith chart where the 3rd order IMD of the final gain block is lower and therefore the linearity is better.…”

“…It is therefore important to work on improving the dynamic range of the receivers as well. There have been a number of papers in recent years focusing on improving the linearity of amplifiers by improving their OIP3 performance [5,6,13,14,19], however they are mostly power amplifiers intended for wireless and radio applications rather than low noise transimpedance amplifiers suitable for analog optoelectronic applications. On the other hand, recent works that focused on amplifier linearity in analog applications suitable for defense electronic systems such as radar and electronic warfare platforms, were based on HEMT technology [15,16] which is not as compatible with OEIC devices such as PIN photodetectors as HBT technology in terms of fabrication simplicity.…”