Precise Tuning of Band Structures and Electron Correlations by van der Waals Stacking of One-dimensional W₆Te₆ Wires

Abstract

Stacking of two-dimensional (2D) van der Waals (vdW) atomic sheets has been established as a powerful approach to fabricating new materials with broad versatilities and emergent functionalities. Here we demonstrate a bottom-up approach to fabricating isolated single W 6 Te 6 wires and their lateral assemblies, offering a unique platform for investigating the elegant role of vdW coupling in 1D systems with atomic precision. We find experimentally and theoretically a single W 6 Te 6 wire is a 1D semiconductor with a band gap of ∼60 meV, and a semiconductor-to-metal transition takes place upon interwire vdW stacking. The metallic multiwires exhibit strong Tomonaga−Luttinger liquid characteristics with the correlation parameter g varying from g = 0.086 for biwire to g = 0.136 for six-wire assemblies, all much reduced from the Fermi liquid regime (g = 1). The present study demonstrates wire-by-wire vdW stacking is a versatile means for fabrication of 1D systems with tunable electronic properties.

Phase control and lateral heterostructures of MoTe2 epitaxially grown on graphene/Ir(111)

“…1(c), the growth at this temperature results mainly in the formation of elongated structures attributed to the formation of nanowires with a Mo 6 Te 6 stoichiometry. [32][33][34] We ascribe it to the strong desorption of Te at these high temperatures. A closer view, see inset in Fig.…”

“…The Mo 6 Te 6 structures appear in general close to 1H regions and have been reported to be metallic. 34,35 The hexagonal (v1H) phase presents an uncommon structure belonging to the P6 ˉ2m group and has not been observed so far in other TMDs. This new structure can be produced in large scale under certain conditions.…”

“…Recently, similar M 6 X 6 structures have been reported to undergo a semiconductor-tometal transition from single to multiwire regime, exhibiting strong Tomonaga-Luttinger liquid characteristics. 34,35…”

High electron mobility and wide-bandgap properties in a novel 1D PdGeS3 nanochain

“…27 In addition to the exfoliation method, chemical vapor deposition, ultrahigh vacuum molecular beam epitaxy, and template-based self-assembly inside carbon nanotubes (CNTs) have also been used to synthesize specific 1D nanowires, such as transition-metal chalcogenide nanowires with a formula of M 6 X 6 (M = Mo or W and X = S, Se, or Te). 28–30…”

“…27 In addition to the exfoliation method, chemical vapor deposition, ultrahigh vacuum molecular beam epitaxy, and template-based self-assembly inside carbon nanotubes (CNTs) have also been used to synthesize specific 1D nanowires, such as transition-metal chalcogenide nanowires with a formula of M 6 X 6 (M = Mo or W and X = S, Se, or Te). [28][29][30] More notably, theoretical calculation is becoming a powerful method in material studies, which can effectively predict the feasibility of preparation, stability of structure, physical and chemical properties, and potential applications in practical devices. 3 Numerous 1D materials have been predicted using theoretical methods, including SbXY (X = S, Se; Y = Br, I), 31 SiX 2 (X = S, Se), 32 Sn 2 X 3 (X = S, Se), 33 Te 2 Br, 34 V 2 Se 9 , 35,36 InSeI, 37,38 and Ta 4 SiTe 4 , 39 which has effectively expanded the family of 1D vdW materials.…”