Predictability of reset switching voltages in unipolar resistance switching

Lee, Shinbuhm; Chae, Seung Chul; Chang, Seo Hyoung; Noh, Tae Won

doi:10.1063/1.3126019

Cited by 35 publications

(36 citation statements)

References 17 publications

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“…Second, the results in this paper indicate that there might be a polarity dependence in the forming process. Recently, we proposed a random circuit breaker (RCB) network model, which can describe the most important features of unipolar RS, such as basic operations, the wide distribution of switching voltages, the temperature-dependent stability of the conducting filaments, the electrode thickness dependences, the scaling relationships between switching parameters, and so on [5,[11][12][13][14][15]. The polarity dependences observed in this paper can easily be implemented into the RCB model by assuming that the local initial defects are higher in one of the electrodes.…”

Section: Resultsmentioning

confidence: 99%

“…Polycrystalline NiO thin films were grown on Pt/Ti/SiO 2 /Si substrates using DC magnetron reactive sputtering [6,[12][13][14]. We prepared 80-nm-thick 15 Â 15 lm 2 top electrodes using photolithographic techniques and e-beam evaporation.…”

Section: Methodsmentioning

confidence: 99%

“…Unipolar RS has been extensively investigated in numerous transition metal oxides [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17]. It is currently widely accepted that unipolar RS occurs through the formation and rupture of local conducting filaments [3][4][5][6][7][8][9][10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

“…The sample in the HRS can again be changed to the LRS under a higher electric field, which is known as a set process. RS between bistable resistance states is scientifically very intriguing and also quite useful in nonvolatile memory applications, i.e., in resistance random access memory (RRAM) [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

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Effects of electrode polarity on filament ruptures during unipolar resistance switchings

Lee

et al. 2010

Current Applied Physics

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Effects of electrode polarity on filament ruptures during unipolar resistance switchings

Lee

et al. 2010

Current Applied Physics

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“…The resistive switching process is usually operated by electrical stimuli [6]. In addition, the operating method also influences the resistive switching behavior [7]. Hence, the measurement technique is very important to characterize the resistive switching characteristics.…”

Section: Introductionmentioning

confidence: 99%

Simulation of the Transient Current of NiO Resistive Memory during the Switching Process by Using RC Circuit

et al. 2013

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A Pt/NiO/Pt device was fabricated to investigate the transient current during the resistive switching process. A large transient current flows through the device, which leads to current damage and switching dispersion. The real transient current through the device is disturbed by the measurement method. Therefore, a circuit model of the measurement system was adopted to simulate the transient current. The transient currents were simulated to evaluate the influence of load resistance, system capacitance, device capacitance, and device resistance. The load resistance only slightly decreases the device current. The device current can also be reduced by changing the device resistance. The simulation results provide a guideline for the device design to reduce the transient current during the resistive switching process.

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Self‐Assembled Networked PbS Distribution Quantum Dots for Resistive Switching and Artificial Synapse Performance Boost of Memristors

et al. 2018

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Resistive switching (RS) is a promising emerging storage technology that has received much attention due to its many advantages, such as economy, fast operating speed, long retention, high density, and low energy consumption. [1] RS effects are widely applied in the fields of nonvolatile RS random access memory (RRAM), artificial neural computing, and reconfigurable logic operations and so on. [2] RRAM memories based on electrochemical metallization (ECM) and valance change mechanism (VCM) are commonly used for the memristor application. [3] Compared with conventional computing based on the von Neumann architecture, memristor (i.e., RS device) computing is proving to be superior for brain-inspired computing, such as image processing and speech recognition, [2] where the diffusion of the metal ions such as Ag + , Cu + , or oxygen vacancies are used to mimic the diffusion of Ca + in the neural cell. [4] However, the switching voltages in the memristor devices (MDs) showWith the advent of the era of big data, resistive random access memory (RRAM) has become one of the most promising nanoscale memristor devices (MDs) for storing huge amounts of information. However, the switching voltage of the RRAM MDs shows a very broad distribution due to the random formation of the conductive filaments. Here, selfassembled lead sulfide (PbS) quantum dots (QDs) are used to improve the uniformity of switching parameters of RRAM, which is very simple comparing with other methods. The resistive switching (RS) properties of the MD with the self-assembled PbS QDs exhibit better performance than those of MDs with pure-Ga 2 O 3 and randomly distributed PbS QDs, such as a reduced threshold voltage, uniformly distributed SET and RESET voltages, robust retention, fast response time, and low power consumption. This enhanced performance may be attributed to the ordered arrangement of the PbS QDs in the self-assembled PbS QDs which can efficiently guide the growth direction for the conducting filaments. Moreover, biosynaptic functions and plasticity, are implemented successfully in the MD with the self-assembled PbS QDs. This work offers a new method of improving memristor performance, which can significantly expand existing applications and facilitate the development of artificial neural systems. Data Storage

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Predictability of reset switching voltages in unipolar resistance switching

Cited by 35 publications

References 17 publications

Effects of electrode polarity on filament ruptures during unipolar resistance switchings

Effects of electrode polarity on filament ruptures during unipolar resistance switchings

Simulation of the Transient Current of NiO Resistive Memory during the Switching Process by Using RC Circuit

Self‐Assembled Networked PbS Distribution Quantum Dots for Resistive Switching and Artificial Synapse Performance Boost of Memristors

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