Prediction of RF interference in operational amplifiers by a new analytical model

Fiori, Franco; Crovetti, Paolo; Pozzolo, V.

doi:10.1109/isemc.2001.950591

Cited by 6 publications

(3 citation statements)

References 7 publications

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“…11, it is notable that the dc output offset voltage is determined not only by the frequency response of the OpAmp, as shown in Fig. 8, but also by the coupling coefficient (Z 21 /Z 11 and Z 31 /Z 11 ) of the hierarchical PDN in the chip and package, as shown in Fig. 9.…”

Section: B Experimental Verification and Analysis Of The Proposed Hymentioning

confidence: 99%

“…These previous studies used a Volterra series model or analytical models to estimate the dc output offset voltage by assuming that the RFIs were added in the form of sinusoidal waves with a uniform amplitude and phase [11]- [14]; this is not practical, especially when the analog chip with the OpAmp is mounted on a multilayer package substrate. Usually, the package-level interconnections produce electromagnetic resonances due to the planar cavity structure of the PDN and parasitic elements of the interconnections [15].…”

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confidence: 99%

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Modeling and Analysis of Simultaneous Switching Noise Coupling for a CMOS Negative-Feedback Operational Amplifier in System-in-Package

Shim¹,

Park²,

Kim³

et al. 2009

IEEE Trans. Electromagn. Compat.

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Abstract-A new hybrid modeling method is proposed for the chip-package comodeling and coanalysis. This method is designed to investigate the simultaneous switching noise (SSN) coupling paths and effects on the dc output voltage offset of the operational amplifier (OpAmp). It combines an analytical model of the circuit with a power distributed network (PDN) and interconnection models at the chip and package substrate. In order to validate the proposed model, CMOS OpAmp was fabricated using TSMC 0.25 µm. Then the dc output offset voltage of the OpAmp was measured by sweeping the SSN frequency from 10 MHz up to 3 GHz. It was successfully demonstrated that the experimental results are consistent with the predictions generated using the proposed model. We also confirmed that the dc offset voltage is strongly dependent on the SSN frequency and the PDN impedance profile of the chip-package hierarchical PDN. It shows the necessity for the chip-package comodeling and simulation of the system-in-package designs.

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Section: B Experimental Verification and Analysis Of The Proposed Hymentioning

confidence: 99%

mentioning

confidence: 99%

Modeling and Analysis of Simultaneous Switching Noise Coupling for a CMOS Negative-Feedback Operational Amplifier in System-in-Package

Shim¹,

Park²,

Kim³

et al. 2009

IEEE Trans. Electromagn. Compat.

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“…This phenomena is attributed either to an inherent square-law nonlinearity [5,11], or to a mixing-effect resulting from the fluctuations of the bias-current of the operational amplifier input differential stage [12][13][14][15][16][17][18][19][20]. While the square-law nonlinearity may arise from the asymmetrical characteristic of the CMOS differential amplifier resulting from mismatched MOS transistors [22], the mixing effect results from the fluctuations induced on the bias current; because of its finite shunt admittance, by the common mode voltage applied to the differential amplifier input terminals [13].…”

Section: Introductionmentioning

confidence: 99%

Analysis of the Effect of Radio Frequency Interference on the DC Performance of CMOS Operational Amplifiers

Abuelma’atti

2005

Analog Integr Circ Sig Process

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Fourier-series approximations are obtained for the input-output characteristic of the CMOS asymmetrical differential amplifier. Using these approximations, the DC current offset of a CMOS differential amplifier subjected to RF interference can be studied and analytical expressions are obtained. These expressions can help in optimizing the parameters of the CMOS differential amplifier to minimize the offset current resulting from the RF interference.

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Characterization of On-chip Interconnections and Capacitive Coupling Effect on CMOS Operational Amplifier

Shim

Pak

Kim

et al. 2009

2009 20th International Zurich Symposium on Electromagnetic Compatibility

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The operational amplifier is one of the most important circuits to compose ADCs, DACs and active filters. Now, there are many papers which deal with noise characters of op amps. Most of them are focused on the input signal noises which flow into circuits without account about noise source. Capacitive coupling is one of the most frequent sources of signal noise. The capacitive coupling is inevitable because of high integration. This paper investigates mechanism of input noises flowing into the op amp and effects of capacitive coupling on the op amp as on-chip interconnection modeling and analytical model of the DC output offset voltage of the OPamp are proposed. Furthermore, the models are verified by experimental measurement.

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Prediction of RF interference in operational amplifiers by a new analytical model

Cited by 6 publications

References 7 publications

Modeling and Analysis of Simultaneous Switching Noise Coupling for a CMOS Negative-Feedback Operational Amplifier in System-in-Package

Modeling and Analysis of Simultaneous Switching Noise Coupling for a CMOS Negative-Feedback Operational Amplifier in System-in-Package

Analysis of the Effect of Radio Frequency Interference on the DC Performance of CMOS Operational Amplifiers

Characterization of On-chip Interconnections and Capacitive Coupling Effect on CMOS Operational Amplifier

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