Preferential {100} grain orientation in 10 micrometer-thick laser crystallized multicrystalline silicon on glass

Kühnapfel, Sven; Nickel, N. H.; Gall, S.; Klaus, Manuela; Genzel, Christoph; Rech, Bernd; Amkreutz, Daniel

doi:10.1016/j.tsf.2015.01.006

Cited by 26 publications

(34 citation statements)

References 25 publications

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“…Moreover, this cap layer prevents from the dewetting of the liquid Si thin film as well. Then the samples were crystallized using a line shaped cw laser (λ = 808 nm ± 10 nm) from LIMO GmbH30. The used optical intensity for the crystallization process was around 3.58 kW/cm 2 .…”

Section: Methodsmentioning

confidence: 99%

Deterministic composite nanophotonic lattices in large area for broadband applications

Xavier

Probst

Becker

2016

Sci Rep

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Exotic manipulation of the flow of photons in nanoengineered materials with an aperiodic distribution of nanostructures plays a key role in efficiency-enhanced broadband photonic and plasmonic technologies for spectrally tailorable integrated biosensing, nanostructured thin film solarcells, white light emitting diodes, novel plasmonic ensembles etc. Through a generic deterministic nanotechnological route here we show subwavelength-scale silicon (Si) nanostructures on nanoimprinted glass substrate in large area (4 cm2) with advanced functional features of aperiodic composite nanophotonic lattices. These nanophotonic aperiodic lattices have easily tailorable supercell tiles with well-defined and discrete lattice basis elements and they show rich Fourier spectra. The presented nanophotonic lattices are designed functionally akin to two-dimensional aperiodic composite lattices with unconventional flexibility- comprising periodic photonic crystals and/or in-plane photonic quasicrystals as pattern design subsystems. The fabricated composite lattice-structured Si nanostructures are comparatively analyzed with a range of nanophotonic structures with conventional lattice geometries of periodic, disordered random as well as in-plane quasicrystalline photonic lattices with comparable lattice parameters. As a proof of concept of compatibility with advanced bottom-up liquid phase crystallized (LPC) Si thin film fabrication, the experimental structural analysis is further extended to double-side-textured deterministic aperiodic lattice-structured 10 μm thick large area LPC Si film on nanoimprinted substrates.

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Section: Methodsmentioning

confidence: 99%

Deterministic composite nanophotonic lattices in large area for broadband applications

Xavier

Probst

Becker

2016

Sci Rep

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“…Subsequently 10 μm silicon was deposited by electron‐beam evaporation. After this, both samples were crystallized with a 3 cm wide, line‐shaped, continuous wave, diode laser ( λ = 808 nm) and a laser crystallization scanning velocity ( v laser ) of 3 mm s −1 . The Si absorber of the sample with the SiO x N y interlayer (called “SiO x N y cell” in this work) had an acceptor density ( N A ) of 6 · 10 16 cm −3 and the silicon was textured with KOH, etching away ∼1.5 μm.…”

Section: Sample Preparation and Characterizationmentioning

confidence: 99%

“…The interlayer stack serves as diffusion barrier, anti‐reflection coating and passivation layer and is usually composed of silicon oxide (SiO x ), silicon nitride (SiN x ), and/or silicon oxynitride (SiO x N y ) layers . The resulting LPC‐Si layer has an average grain size comparable to that of multi‐crystalline wafers . In 2011, an open circuit voltage ( V OC ) of 545 mV was realized on LPC‐Si.…”

Section: Introductionmentioning

confidence: 99%

Influence of the Frontside Charge Inversion Layer on the Minority Carrier Collection in Backside Contacted Liquid Phase Crystallized Silicon on Glass Solar Cells

et al. 2017

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External quantum efficiency and light beam induced current measurements were used to investigate backside contacted solar cells made on p‐type, liquid phase crystallized silicon on glass (LPC‐Si). Among other differences, these cells had either a SiOxNy or an Al2O3/SiO2 based frontside surface passivation (interlayer). From the measurements it was observed that the cell with the SiOxNy interlayer showed a charge carrier collection from below the absorber contact and from outside the cell area that is much larger than expected from the typical diffusion length in LPC‐Si. This was in contrast to the cell with the Al2O3/SiO2 interlayer, which showed the expected behavior. It was also observed that for the cell with the SiOxNy interlayer, both the collection outside and the collection inside the cell area were strongly bias light dependent. It is argued that these charge carriers collected from outside the cell area are collected through a frontside charge inversion layer. This was supported by an analysis of the measured wavelength and bias light dependence of the collection outside the cell area for the cell with the SiOxNy interlayer. The measured fixed charge density of the interlayer stack with the SiOxNy layer was used to estimate the sheet resistance of the frontside charge inversion layer and this sheet resistance could explain the bias light dependence of the collection outside the cell area. The fixed charge density was also used to simulate the excess carrier density dependence of effective surface recombination at the SiOxNy/c‐Si interface and these simulation results could explain the bias light dependence of the collection inside the cell area.

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“…The laser had a wavelength of λ Laser = 808 nm and was operated with a power density of P Laser = 2100 W cm −2 . Crystallization of the a‐Si layer resulted in a in the formation of a polycrystalline silicon layer with a with a preferential {100} grain orientation . Prior to crystallization, the samples were slowly pre‐heated from 400 to 700 °C to reduce thermal stress.…”

Section: Sample Preparationmentioning

confidence: 99%

Enhanced stability of P3HT/poly‐crystalline Si thin film hybrid solar cells

Zellmeier

Kühnapfel

Rech

et al. 2016

Physica Status Solidi (a)

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Hybrid solar cells have been fabricated from solution processing of poly-(3-hexylthiophen-2,5-diyl) onto planar poly-crystalline thin film silicon (poly-Si) absorbers on glass. The poly-Si layers were prepared by laser crystallization. Methyl passivation of the poly-Si surface by a one-step grafting process via methyl-Grignard enabled open circuit voltages of up to 552 mV and an overall power conversion efficiency of 6.6% for this device type. The solar cell exhibited significant advantages compared to the wafer-based counterparts. The inverted device structure of the thin film cell lead to an enhancement of the quantum efficiency since the back side contacted cell had less light absorption and reflection losses due to the gold layer which was used as front contact for the c-Si-based hybrid solar cell. As a result, a photo current of 24.3 mA cm À2 was obtained for a 10 mm thin poly-Si layer on glass. Furthermore, the inverted device structure showed a pronounced increase in stability due to the much thicker gold back contact that reduces the diffusion of water and oxygen toward the polymer layer. After 3 months in ambient air, this type of solar cell operated with 86% of its initial efficiency.

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Preferential {100} grain orientation in 10 micrometer-thick laser crystallized multicrystalline silicon on glass

Cited by 26 publications

References 25 publications

Deterministic composite nanophotonic lattices in large area for broadband applications

Deterministic composite nanophotonic lattices in large area for broadband applications

Influence of the Frontside Charge Inversion Layer on the Minority Carrier Collection in Backside Contacted Liquid Phase Crystallized Silicon on Glass Solar Cells

Enhanced stability of P3HT/poly‐crystalline Si thin film hybrid solar cells

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