Preferential orientation of NV defects in CVD diamond films grown on (113)-oriented substrates

Growth of thick and heavily boron-doped (113)-oriented CVD diamond films

“…2a together with that of a reference layer grown on (100) with a ([B]/[C]) gas ratio of 10,000 ppm. The spectrum obtained for the non-intentionally doped sample (A) shows only the diamond Raman peak with a Full Width at Half Maximum (FWHM) of 1.8 cm -1 similar to highquality intrinsic films obtained on a (100) orientation as already reported [1]. When diborane concentration in the gas phase is increased, the diamond peak becomes enlarged and distorted due to the Fano effect largely described in the literature when boron concentration exceeds 1x10 19 cm -3 in single crystal layers (see for example [21]).…”

“…[1]. The <113> diamond substrates obtained were cylindrical with a 2 mm diameter and a thickness of 0.5 mm.…”

“…Recently we have obtained high quality smooth films at fairly high growth rates (up to 20 µm/h) on (113) substrates [1]. In these experiments Nitrogen-Vacancy (NV) centres created by adding N 2 during growth have exhibited a high degree of preferential orientation (up to 73 %).…”

Wide-field strain imaging with preferentially aligned nitrogen-vacancy centers in polycrystalline diamond

“…This effect persists independent of the direction of the applied permanent magnetic field (supplemental material), and across grains in the PCD. Preferential orientation of NVs through engineered growth has been theoretically predicted [16,17] and observed previously in single crystal diamond with controlled growth along {110} [18,19], {111} [20,21] and {113} [22]. These results indicate that preferential alignment occurs naturally in PCD, possibly due to predominant {110} and {111} grain textures.…”

Nanoscale Sensing Using Point Defects in Single-Crystal Diamond: Recent Progress on Nitrogen Vacancy Center-Based Sensors

“…In <100> diamond, NV centers align along all four equivalent <111> directions and have an oblique angle of 54.7 • with the pillar axis. As an alternative, CVD growth in the <113> direction has been investigated [113]. In this material, 73% of NVs form an angle of 29.5 • with the potential pillar axis and thus bring their dipoles closer to the ideal orientation.…”