Preferred orientation in hot-pressed Ca ?-SiAlON ceramics

Wang, H.; Cheng, Yi‐Bing; Muddle, Barry C.; Gao, Lian; Yen, T.S.

doi:10.1007/bf00275302

Cited by 44 publications

(31 citation statements)

References 4 publications

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“…The Lifshitz-Slyozow-Wagner (LSW) theory predicts growth exponents of n = 2 and 3 for interfacial reaction control and diffusion control, respectively. In their work, they found that n = 3 for both length [001] and width [210] directions, indicating diffusion control. However, Lai and Tien [87] observed that n = 3 and 5 for the length and width directions of β-Si 3 N 4 in sintered Si 3 N 4 ceramics, respectively.…”

Section: 11mentioning

confidence: 98%

“…To help with understanding the texturing behavior in Si 3 N 4 ceramics, we wish to briefly outline β-Si 3 N 4 grain growth [210] directions. The white arrow indicates a typical large elongated grain growing epitaxially from an initial seed particle (dark gray color) along the c-axis direction during sintering, the so-called core-rim or shell structure.…”

Section: Grain Growth Of β-Si 3 Nmentioning

confidence: 99%

“…This is attributed to the much faster growth rate along the [001] (or c-axis) direction than along the [210] direction, namely so-called anisotropic or elongated grain growth. The elongated grain growth allows Si 3 N 4 ceramics to exhibit a unique self-reinforced microstructure and also a textured microstructure.…”

Section: Anisotropic Grain Growthmentioning

confidence: 99%

“…The rough basal plane allows a lower activation energy for nucleation and thus continuous growth in comparison with the smooth prism plane. Thus, this unique interface characteristic leads to the faster growth kinetics in the [001] direction than in the [210] direction, and thereby the observed anisotropic grain shape of β-Si 3 N 4 . On the basis of this model, Hwang et al [86] provided a reasonable explanation of the anisotropic grain growth of β-Sialon by developing new growth kinetics equations as an alternative to the classic Ostwald ripening model:…”

Section: 11mentioning

confidence: 99%

“…The relative peak intensity ratios mostly used for β-Si 3 N 4 include I (210) /I (101) , I (200) /I (101) , I (200) /I (101) and I (002) /I (210) . For example, the a, b-axis orientation (figure 5) can be identified by the higher I (210) /I (101) value on the plane parallel to the c-axis than that on the plane parallel to the a, b-axis, as shown in figure 5(c).…”

Section: A Relative Peak Intensitymentioning

confidence: 99%

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Textured silicon nitride: processing and anisotropic properties

Zhu

Sakka

2008

Science and Technology of Advanced Materials

158

104

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Textured silicon nitride (Si 3 N 4 ) has been intensively studied over the past 15 years because of its use for achieving its superthermal and mechanical properties. In this review we present the fundamental aspects of the processing and anisotropic properties of textured Si 3 N 4 , with emphasis on the anisotropic and abnormal grain growth of β-Si 3 N 4 , texture structure and texture analysis, processing methods and anisotropic properties. On the basis of the texturing mechanisms, the processing methods described in this article have been classified into two types: hot-working (HW) and templated grain growth (TGG). The HW method includes the hot-pressing, hot-forging and sinter-forging techniques, and the TGG method includes the cold-pressing, extrusion, tape-casting and strong magnetic field alignment techniques for β-Si 3 N 4 seed crystals. Each processing technique is thoroughly discussed in terms of theoretical models and experimental data, including the texturing mechanisms and the factors affecting texture development. Also, methods of synthesizing the rodlike β-Si 3 N 4 single crystals are presented. Various anisotropic properties of textured Si 3 N 4 and their origins are thoroughly described and discussed, such as hardness, elastic modulus, bending strength, fracture toughness, fracture energy, creep behavior, tribological and wear behavior, erosion behavior, contact damage behavior and thermal conductivity. Models are analyzed to determine the thermal anisotropy by considering the intrinsic thermal anisotropy, degree of orientation and various microstructure factors. Textured porous Si 3 N 4 with a unique microstructure composed of oriented elongated β-Si 3 N 4 and anisotropic pores is also described for the first time, with emphasis on its unique mechanical and thermal-mechanical properties. Moreover, as an important related material, textured α-Sialon is also reviewed, because the presence of elongated α-Sialon grains allows the production of textured α-Sialon using the same methods as those used for textured β-Si 3 N 4 and β-Sialon.

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Section: 11mentioning

confidence: 98%

Section: Grain Growth Of β-Si 3 Nmentioning

confidence: 99%

Section: Anisotropic Grain Growthmentioning

confidence: 99%

Section: 11mentioning

confidence: 99%