2017
DOI: 10.1088/1742-6596/817/1/012025
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Preparation and structural characterization of ZnO thin films by sol-gel method

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Cited by 32 publications
(19 citation statements)
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“…Similar results were obtained by electrodeposition from aqueous solutions [52,53], plasma-assisted atomic layer deposition (PAALD) using H 2 O-plasma as oxidant [54][55][56] and pulsed laser deposition (PLD) [57,58]. However, using sol-gel method, pure ZnO thin films were formed after annealing at high temperatures [59,60].…”
Section: Effect Of the Electrodeposition Methods On Zno Thin-film Propsupporting
confidence: 64%
“…Similar results were obtained by electrodeposition from aqueous solutions [52,53], plasma-assisted atomic layer deposition (PAALD) using H 2 O-plasma as oxidant [54][55][56] and pulsed laser deposition (PLD) [57,58]. However, using sol-gel method, pure ZnO thin films were formed after annealing at high temperatures [59,60].…”
Section: Effect Of the Electrodeposition Methods On Zno Thin-film Propsupporting
confidence: 64%
“…The effect of pH in the acidic medium resulted in non-uniformity and agglomeration of ZnO but as the pH increased giving rise to an alkaline solution, there was significant growth of ZnO nanocrystallites (Shaban et al 2018). Increase in the precursor concentration affected the Zn-O bond length in the range of 1.9651-19,745 Å as reported by Aryanto et al (2017). They confirmed that there was an increase in the lattice volume of the ZnO nanomaterial.…”
Section: Synthesis and Mechanism Reaction Of Znomentioning
confidence: 61%
“…Oven-drying was done at 60 °C for 2 h, and it was allowed to age for 24 h at room temperature. Similar precursor and stabilizer but a different organic solvent were employed in the study reported by Aryanto et al (2017). In their study, Zn(CH 3 COO) 2 •2H 2 O, C 2 H 5 OH, and C 2 H 7 NO mixture was stirred at ambient temperature with a magnetic stirrer for 1 h.…”
Section: Synthesis and Mechanism Reaction Of Znomentioning
confidence: 99%
“…The fabrication, examination, and characterization of Zinc Oxide (ZnO) thin film have been an active and functional field of different research for decades [1]. Recently, many scientists and researchers have been extensively studied and worked on the wide energy gap semiconductor materials includes ZnO due to their excellent properties and uses in optoelectronic (OPE) devices [2]. The ZnO has a hexagonal wurtzite structure and direct optical energy gap which is 3.37 eV at room temperature (RT) [3][4][5][6].…”
Section: Introductionmentioning
confidence: 99%