Preparation, characterization and dielectric properties of Ba5LnZnTa9O30 (Ln=La, Sm) ceramics

Fang, Liang; Zhang, H; Yang, Jingna; Yuan, Ran; Liu, H.X

doi:10.1016/j.materresbull.2003.12.004

Cited by 38 publications

(20 citation statements)

References 12 publications

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“…Recently, owing to the rapid progress in microwave telecommunications, satellite broadcasting, and other related technologies, a number of Ba based TB compounds with dielectric constant nearly 100 have attracted much attention because of their importance in the miniaturization of microelectronic devices [6][7][8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Structural, dielectric, electrical and piezoelectric properties of Ba4SrRTi3V7O30 (R=Sm, Dy) ceramics

Sahoo¹,

Panigrahi²,

Patri³

et al. 2008

Open Physics

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Abstract:Polycrystalline samples of Ba 4 SrRTi 3 V 7 O 30 (R=Sm and Dy), members of the tungsten-bronze family, were prepared using a high-temperature, solid-state reaction technique and studied their electrical properties (using complex impedance spectroscopy) in a wide range of temperature (31-500 • C) and frequency (1 kHz -1 MHz). Preliminary structural (XRD) analyses of these compounds show the formation of single-phase, orthorhombic structures at room temperature. The scanning electron micrographs (SEM) provided information on the quality of the samples and uniform distribution of grains over the entire surface of the samples. Detailed studies of the dielectric properties suggest that they have undergone ferroelectric-paraelectric phase transition well above the room temperatures (i.e., 432 and 355 • C for R= Sm and Dy, respectively, at frequency 100 kHz). Measurements of electrical conductivity (ac and dc) as a function of temperature suggest that the compounds have semiconducting properties much above the room temperature, with negative temperature coefficient of resistance (NTCR) behavior. The existence of ferroelectricity in these compounds was confirmed from a polarization study.

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Section: Introductionmentioning

confidence: 99%

Structural, dielectric, electrical and piezoelectric properties of Ba4SrRTi3V7O30 (R=Sm, Dy) ceramics

Sahoo¹,

Panigrahi²,

Patri³

et al. 2008

Open Physics

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“…These ceramics have high dielectric constants ε r of 102-118 and low dielectric loss (tanδ) of 0.0019-0.0036 at 1 MHz. The dielectric constant of Ba 5 LnNiTa 9 O 30 are higher than those of Ba 5 LnZnTa 9 O 30 (Ln = La, Nd, Sm) in the range 74-89 [18,19]. The highest and the lowest dielectric constant are exhibited in BLNT and BSNT, respectively, similar to that shown in Ba 5 LnZnTa 9 O 30 ceramics.…”

Section: Resultsmentioning

confidence: 56%

“…The Tc of Ba 5 LnNiTa 9 O 30 decreased with increasing ionic radius from Sm 3+ to La 3+ , which agreed with the results reported by Choudhary and Chen et al in Sr 5 LnTi 3 Nb 7 O 30 and Ba 5 LnTi 3 Nb 7 O 30 (Ln=La, Nd and Sm) [10,24]. The temperature coefficients of dielectric constants are −345 ppm • C −1 for BLNT, −320 ppm • C −1 for BNNT, and -460 ppm • C −1 for BSNT, which are slightly reduced compared to those of Ba 5 LnZnTa 9 O 30 in the range −811∼ −415 ppm • C −1 [18,19] but are significantly reduced compared with those of the TB ceramics Ba 5 LnTi 3 Ta 7 O 30 (Ln=La, Nd, Sm) in the range −1347∼ −2500 ppm • C −1 [9].…”

Section: Resultsmentioning

confidence: 94%

“…Sebastian and Chen et al proposed some promising candidates for high dielectric constant (ε > 100) dielectric ceramics with filled tungstenbronze structure in BaO-Ln 2 O 3 -TiO 3 -M 2 O 5 system (Ln = La, Sm, Nd; M = Ta, Nb) [7][8][9][10]. We recently conducted the systematic studies on the preparation and dielectric properties of Sr-based TB ceramics such as Sr 5 LnTi 3 Ta 7 O 30 and Sr 4 Ln 2 Ti 4 Ta 6 O 30 [12][13][14][15], Sn-contained ceramics A 5 LnSn 3 Nb 7 O 30 (A = Ba, Sr) [16,17], and Zn-contained TB ceramics Ba 5 LnZnM 9 O 30 (M = Ta, Nb) [18][19][20]. Since very little data are available on TB compounds in the BaOLn 2 O 3 -NiO-Ta 2 O 5 system, this paper firstly presents the preparation, characterization and dielectric properties of new TB compounds Ba 5 LnNiTa 9 O 30 (Ln = La, Nd, Sm).…”

Section: Introductionmentioning

confidence: 99%

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Characterization and dielectric properties of Ba5LnNiTa9O30 (Ln = La, Nd and Sm) ceramics

et al. 2006

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Three novel Ba 5 LnNiTa 9 O 30 (Ln = La, Nd and Sm) ceramics were prepared and characterized in the BaO-Ln 2 O 3 -NiO-Ta 2 O 5 system. All three compounds adopted the filled tetragonal tungsten bronze (TB) structure at room temperature. The present ceramics exhibited relaxor behavior, and the Curie temperature (at 10kHz) were −130, -80 and -45 • C for Ba 5 LaNiTa 9 O 30 , Ba 5 NdNiTa 9 O 30 , and Ba 5 SmNiTa 9 O 30 respectively. At room temperature, Ba 5 LnNiTa 9 O 30 ceramics have a high dielectric constants in the range 102∼118, a low dielectric loss in range 0.0019∼0.0036, and the temperature coefficients of the dielectric constant (τ ε ) in the range -320∼−460 ppm • C −1 (at 1 MHz).

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“…The physical properties of the materials with the TB structure can thus be tailored by the substitution of varieties of cations at different interstitial sites for various applications. Detailed literature survey on various physical properties of TB structure reveals that a lot of work has been done in the past on ferroelectric ceramics of this family [1][2][3][4][5][6][7][8][9][10]. The structure and ferroelectric properties in six-valence complex TB structure compounds such as Na 2 [14].…”

Section: Introductionmentioning

confidence: 99%

Electrical properties of Na2Pb2R2W2Ti4V4O30 (R = Dy, Pr) ceramics

et al. 2013

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Abstract:The polycrystalline samples of complex tungsten bronze (TB) Na 2 Pb 2 R 2 W 2 Ti 4 V 4 O 30 (R=Dy, Pr) compounds were prepared by solid-state reaction technique. Room-temperature preliminary structural studies confirm the formation of the compounds in the orthorhombic crystal system. Detailed studies of electrical properties of the materials using complex impedance spectroscopy technique exhibit that the impedance and related parameters are strongly dependent upon temperature and microstructure (bulk, grain boundary, etc). An observation of negative temperature coefficient of resistance (NTCR) suggests the materials have semiconducting properties. The variation of AC conductivity with temperature shows a typical Arrhenius behavior of the materials. Both the samples obey Jonscher's universal power law. The existence of hopping mechanism in the electrical transport processes in the system with non-exponential type of conductivity relaxation is confirmed by electrical modulus analysis.

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Preparation, characterization and dielectric properties of Ba5LnZnTa9O30 (Ln=La, Sm) ceramics

Cited by 38 publications

References 12 publications

Structural, dielectric, electrical and piezoelectric properties of Ba4SrRTi3V7O30 (R=Sm, Dy) ceramics

Structural, dielectric, electrical and piezoelectric properties of Ba4SrRTi3V7O30 (R=Sm, Dy) ceramics

Characterization and dielectric properties of Ba5LnNiTa9O30 (Ln = La, Nd and Sm) ceramics

Electrical properties of Na2Pb2R2W2Ti4V4O30 (R = Dy, Pr) ceramics

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