Preparation of In<sub>2</sub>S<sub>3</sub>Thin Films by MOCVD Using Single Source Precursors: Tris(N,N-ethylbutyldithiocarbamato)indium(III) and Tris(2-ethylpiperidinedithiocarbamato)indium(III)

Lee, Seung Soo; Yoon, Seok Hwan; Seo, Kook Won; Shim, Il-Wun

doi:10.5012/bkcs.2005.26.9.1453

Cited by 6 publications

(4 citation statements)

References 12 publications

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“…The growth rate of the In 2 S 3 films was 2.8 nm/min on average at the temperature region near 370 °C. However, the rate notably increased to 43.3 nm/min at the higher temperature region of 490 °C 2 XRD pattern of the In 2 S 3 thin films deposited at different temperatures on glass.…”

Section: Resultsmentioning

confidence: 97%

“…The In(ebdtc) 3 precursor was also quite stable in ambient conditions and had a relatively lower melting point with a short decomposition temperature range in comparison to the known similar precursors, suggesting that it can be used in the MOCVD process under relatively milder conditions …”

Section: Resultsmentioning

confidence: 99%

“…They were filtered, dried under a vacuum, and recrystallized. The product, designated as In(ebdtc) 3 , was obtained with high yield, 89% . Its melting point was found to be 140 °C and its decomposition temperature about 350 °C.…”

Section: Methodsmentioning

confidence: 99%

“…In this paper, to prepare the CIS films in a similar manner, we used three distinctive Cu- and In/S-containing precursors: first, pure Cu films were prepared on glass or indium/tin oxide (ITO) glass substrates by using a single-source precursor, bis(ethylbutyrylacetato)copper(II) [Cu(ebac) 2 ] or Cu(eiac) 2 ; second, on the resulting Cu film, tris( N , N -ethylbutyldithiocarbamato)indium(III), designated as In(ebdtc) 3 , , was treated to produce CIS films by a MOCVD method.…”

Section: Introductionmentioning

confidence: 99%

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Deposition of CuInS₂ Thin Films Using Copper- and Indium/Sulfide-Containing Precursors through a Two-Stage MOCVD Method

et al. 2006

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Copper indium disulfide (CuInS2; CIS) films were deposited on various substrates by two-stage metal-organic chemical vapor deposition (MOCVD) at relatively mild conditions, using Cu- and In/S-containing precursors without toxic H2S gas: first, a pure Cu thin film was prepared on glass or indium/tin oxide glass substrates by using a single-source precursor, bis(ethylbutyrylacetato)copper(II) or bis(ethylisobutyrylacetato)copper(II); second, on the resulting Cu film, tris(N,N-ethylbutyldithiocarbamato)indium(III) was treated to produce CIS films by a MOCVD method at 430 degrees C. In this process, their thicknesses and stoichiometries were found to be elaborately controlled on demand by adjusting the process conditions. The optical band gap of the stoichiometric CIS film was about 1.41 eV, which is in the near-optimal range for harvesting solar radiation energy.

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Section: Resultsmentioning

confidence: 97%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Deposition of CuInS₂ Thin Films Using Copper- and Indium/Sulfide-Containing Precursors through a Two-Stage MOCVD Method

et al. 2006

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Metallic Materials Deposition: Metal‐Organic PrecursorsUpdate based on the original article by Charles H. Winter, Wenjun Zheng and Hani M. El‐Kaderi,Encyclopedia of Inorganic ChemistrySecond Edition, © 2005, John Wiley & Sons, Ltd.

Winter

Knisley

Kalutarage

et al. 2012

Encyclopedia of Inorganic and Bioinorganic Chemistry

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This review describes metal‐organic precursors for the growth of metal‐containing thin films by chemical vapor deposition (CVD)‐based methods. The major emphasis is on precursors that have been reported since 2004, which corresponds to a time of major growth in this field. Progress in the development of metal‐organic precursors is documented for the main group, lanthanide, and group 4– 11 elements. In the main group elements, there has been considerable research activity directed toward the identification of strontium and barium precursors, due both to the technological importance of mixed oxide phases and the inherent difficulties in obtaining volatile, stable thermally complexes of these large metal ions. Aluminum, gallium, and indium have also been the subject of intense investigation because of the importance of many phases containing these elements. The group 4 and 5 elements titanium, zirconium, hafnium, niobium, and tantalum have been the subject of considerable precursor development activity because of the importance of several mixed oxide phases and the applications of zirconium oxide and hafnium oxide as high‐permittivity gate materials in microelectronic devices. Growth of metal nitride films of these elements has also been an active area of research for use as barrier materials in microelectronic devices. The deposition of copper and other first‐row transition‐metal films from metal‐organic precursors is driven by the urgent need for copper metalization procedures in microelectronics device manufacturing. The atomic layer deposition (ALD) growth of the noble metals ruthenium, rhodium, iridium, palladium, and platinum has been a very active research area. The current state of metal‐organic precursor development is presented for each of these metallic elements.

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Highly Stable Hierarchical Flower-like β-In2S3 Assembled from 2D Nanosheets with high Adsorption-Photodecolorization Activities for the Treatment of Wastewater

et al. 2017

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Preparation of In₂S₃Thin Films by MOCVD Using Single Source Precursors: Tris(N,N-ethylbutyldithiocarbamato)indium(III) and Tris(2-ethylpiperidinedithiocarbamato)indium(III)

Cited by 6 publications

References 12 publications

Deposition of CuInS₂ Thin Films Using Copper- and Indium/Sulfide-Containing Precursors through a Two-Stage MOCVD Method

Deposition of CuInS₂ Thin Films Using Copper- and Indium/Sulfide-Containing Precursors through a Two-Stage MOCVD Method

Metallic Materials Deposition: Metal‐Organic PrecursorsUpdate based on the original article by Charles H. Winter, Wenjun Zheng and Hani M. El‐Kaderi,Encyclopedia of Inorganic ChemistrySecond Edition, © 2005, John Wiley & Sons, Ltd.

Highly Stable Hierarchical Flower-like β-In2S3 Assembled from 2D Nanosheets with high Adsorption-Photodecolorization Activities for the Treatment of Wastewater

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Preparation of In2S3Thin Films by MOCVD Using Single Source Precursors: Tris(N,N-ethylbutyldithiocarbamato)indium(III) and Tris(2-ethylpiperidinedithiocarbamato)indium(III)

Cited by 6 publications

References 12 publications

Deposition of CuInS2 Thin Films Using Copper- and Indium/Sulfide-Containing Precursors through a Two-Stage MOCVD Method

Deposition of CuInS2 Thin Films Using Copper- and Indium/Sulfide-Containing Precursors through a Two-Stage MOCVD Method

Metallic Materials Deposition: Metal‐Organic PrecursorsUpdate based on the original article by Charles H. Winter, Wenjun Zheng and Hani M. El‐Kaderi,Encyclopedia of Inorganic ChemistrySecond Edition, © 2005, John Wiley & Sons, Ltd.

Highly Stable Hierarchical Flower-like β-In2S3 Assembled from 2D Nanosheets with high Adsorption-Photodecolorization Activities for the Treatment of Wastewater

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Preparation of In₂S₃Thin Films by MOCVD Using Single Source Precursors: Tris(N,N-ethylbutyldithiocarbamato)indium(III) and Tris(2-ethylpiperidinedithiocarbamato)indium(III)

Deposition of CuInS₂ Thin Films Using Copper- and Indium/Sulfide-Containing Precursors through a Two-Stage MOCVD Method

Deposition of CuInS₂ Thin Films Using Copper- and Indium/Sulfide-Containing Precursors through a Two-Stage MOCVD Method