Preparation of lanthanum doped Bi4Ti3O12 ceramics by the polymeric precursor method

Simões, Alexandre Zirpoli; Quinelato, C.; Ries, Andreas; Stojanovic, B. D.; Longo, Elson; Varela, José Arana

doi:10.1016/j.matchemphys.2005.09.070

Cited by 54 publications

(45 citation statements)

References 19 publications

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“…1 A number of techniques have been employed to synthesize these materials both in thin film and ceramic forms. [2][3][4][5][6] For thin films, a number of research work have shown that highly c-axis oriented grain morphology could be produced by several processing techniques particularly the templated grain growth method which enabled measurements of anisotropic properties of these films. [7][8][9][10] In ceramics, it has been well known that both pure and doped BIT possess plate-like grains and properties which are also orientation dependent.…”

Section: Introductionmentioning

confidence: 99%

Grain growth behavior in bismuth titanate-based ceramics

Watcharapasorn

Siriprapa

Jiansirisomboon

2010

Journal of the European Ceramic Society

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Section: Introductionmentioning

confidence: 99%

Grain growth behavior in bismuth titanate-based ceramics

Watcharapasorn

Siriprapa

Jiansirisomboon

2010

Journal of the European Ceramic Society

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“…Bismuth vacancies V Bi ''' generated by the volatilization of this element impose the creation of oxygen vacancies V O •• to maintain the charge neutrality 22,36,52 . These charged defects can reduce the electrical resistivity, which may culminate in leakage current and domain pinning 24 . To better evaluate the materials' electrical performance according to temperature of measurements, Figure 10-B shows the Bode diagram for the most resistive sample (600-0).…”

Section: Resultsmentioning

confidence: 99%

“…Different synthesis routes have been proposed for production of bismuth titanates and related materials. Methods such as sol-gel 3 , polymeric precursors 24 , high energy milling 25,26 , hydrothermal 10,18,27 and coprecipitation 6,9 have been assessed for their production. In addition, the use of the solution combustion route has been reported in some studies with promising results 20,22 .…”

Section: Introductionmentioning

confidence: 99%

Production of Nanometric Bi4Ti3O 12 Powders: from Synthesis to Optical and Dielectric Properties

et al. 2018

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This paper aims to evaluate the synthesis and annealing parameters for production of nanometric Bi 4 Ti 3 O 12 and its properties. The powders were obtained through the solution combustion route and the impacts of annealing temperature on the materials' physicochemical features as well as their optical and electrical properties were investigated. Thus, the prepared powders were annealed at 600ºC, 700ºC and 800ºC and then characterized by several techniques. The results demonstrated that the combustion method was effective for production of nanocrystalline powders with high levels of purity. A trend for particle and crystallite growth was observed as the calcination temperature increased. X-Ray, HRTEM and Raman spectroscopy confirmed the crystalline nature of the powders, whereas impedance spectroscopy demonstrated a reduction of electrical resistance according to the calcination temperature applied. Optical properties were not highly influenced by annealing. The temperature of 600ºC was appropriate to produce crystalline particles with desirable low sizes for application.

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“…A number of techniques have been employed to fabricate BLT thin films and ceramics [2][3][4][5][6]. For thin films, a number of research works have shown that this material showed better hysteresis behavior, smaller leakage current density, higher remanent polarization and was virtually fatigue-free compared to Bi 4 Ti 3 O 12 (or BIT) [1,5,7].…”

Section: Introductionmentioning

confidence: 99%

Electrical and Mechanical Characteristics of (Bi_{4 −x}La_x)Ti₃O₁₂Ceramics

2009

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Effect of concentration of La doping on phase, microstructure and properties of 0, 0.25, 0.5, 0.75, 1) ceramics was investigated. X-ray diffraction patterns of the ceramics indicated orthorhombic structure with lattice distortion, especially with higher content of La dopant. All samples showed plate-like morphology with different grain size and orientation. Preferred orientation in undoped and lightly doped BLT ceramics was dominant compared to the samples with high La contents. The reduced preferred orientation in highly doped BLT was accompanied by a decrease in grain size and a slight decrease in density. The temperature dependence of dielectric constant showed a decrease in T c with increasing La concentration. Dielectric constant measured at room temperature tended to increase with La-content. An addition of La also improved mechanical characteristics of the BIT ceramics.

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Preparation of lanthanum doped Bi4Ti3O12 ceramics by the polymeric precursor method

Cited by 54 publications

References 19 publications

Grain growth behavior in bismuth titanate-based ceramics

Grain growth behavior in bismuth titanate-based ceramics

Production of Nanometric Bi4Ti3O 12 Powders: from Synthesis to Optical and Dielectric Properties

Electrical and Mechanical Characteristics of (Bi_{4 −x}La_x)Ti₃O₁₂Ceramics

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Preparation of lanthanum doped Bi4Ti3O12 ceramics by the polymeric precursor method

Cited by 54 publications

References 19 publications

Grain growth behavior in bismuth titanate-based ceramics

Grain growth behavior in bismuth titanate-based ceramics

Production of Nanometric Bi4Ti3O 12 Powders: from Synthesis to Optical and Dielectric Properties

Electrical and Mechanical Characteristics of (Bi4 −xLax)Ti3O12Ceramics

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Electrical and Mechanical Characteristics of (Bi_{4 −x}La_x)Ti₃O₁₂Ceramics