Preparation of silver thin films using liquid-phase precursors by metal organic chemical vapor deposition and their conversion to silver selenide films by selenium vapor deposition

Controlled Nanostructured Silver Coated Surfaces by Atmospheric Pressure Chemical Vapour Deposition

“…At low temperatures the islands appear to be smaller than at elevated temperatures and the surface also looks to be rougher at higher temperatures, in agreement with Kim et al [3] From Table 2 it can be seen that the variation between the measured island sizes was greatest at 300°C. The SEM images show that the islands are closer, in some cases touching at elevated temperatures, which gave rise to coatings of lower electrical resistance (see section 2.9).…”

“…The reflections observed are: 38°(111) and 44°(200), the preferential orientation being (111) in agreement to that seen in other studies. [3,24] From Figure 3 the change in crystal structure can be seen against varying substrate temperature, with a constant 30 passes. Examination of the XRD (Figure 3) shows that the substrate temperature has a strong influence on the crystal structure of the silver coatings.…”

“…Some of these applications include: catalysts, [1] optical devices, [2] components in high temperature superconductors, bactericidal coatings, [3] electro luminescent materials and photography. It is also used for contact materials in microelectronic circuitry as silver has the highest conductivity of all metals and possesses the lowest contact resistance with a bulk resistivity of 1.59 lX.cm.…”

Preparation of ZnO Thin Films Using Zn/O-containing Single Precursorthrough MOCVD Method

“…A detailed description of the equipment and methodology used has been published previously. [22][23][24] In deposition process using TMEDA-Zn (eacac) 2 , bubbler temperature was controlled to 110 o C and ZnO thin films were deposited in the temperature range of 390-430 °C for 1hr on Si (100). The resulting thin films were characterized by powder X-ray diffractometer (Scintag XDS-2000) and fieldemission scanning electron microscope (Hitach S-4700).…”

“…Such fabrication temperatures are too high for the application to the CuInSe2/CdS or In 2 S 3 /ZnO type solar cell because the absorber and/or buffer layers in CIS type solar cells might be seriously damaged with the accompanying structural change and/or diffusion. [21][22][23][24] Thus, in an effort to obtain ZnO thin films through MOCVD method below 450°C, we have synthesized and characterized a new zinc adduct, TMEDA-Zn(eacac) 2 (eacac = ethyl acetoacetate, TMEDA = N,N,N',N'-tetramethyethylendiamine). In this paper, we show that the ZnO single-crystalline films could be successfully fabricated on Si (100) substrates through the MOCVD method at relatively milder conditions.…”