Preparation of single crystals of semiconducting phases in the Zn-Sb system

Ugai, Ya. A.; Averbakh, E. M.; Kruglova, G. S.

doi:10.1007/bf00827926

Cited by 2 publications

(2 citation statements)

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“…This value is consistent with the 1.1 ± 0.1 eV range reported for 𝛽 Zn 4 Sb 3 . [23][24][25] The very Sb-rich sample (S1) has a direct gap around 0.69 eV, which could be attributed to the 𝛽 −Zn 8 Sb 7 phase dominant in this sample. This value is close to the theoretically calculated direct bandgap value 0.61 eV, found using density functional theory with generalized gradient approximation (for structural optimization) and the modified Becke Johnson (MBJ) potential (for electronic structure calculation).…”

Section: Optical Bandgapmentioning

confidence: 92%

“…[13] For example, the direct bandgap 𝛽 Zn 4 Sb 3 has been measured by several groups in the range 1.0 -1.2 eV. [23][24][25] Additionally, a lower value of the bandgap, typically 0.3-0.35 eV, has often been reported for polycrystalline ZnSb, but the character of this gap (direct, indirect or semi-localised states) is not clear. [13] Push-to-flex cyclic testing has not been applied to ZnSb flexible films, and there is a need to clarify the optical transitions in defective and multi-phase ZnSb material.…”

Section: Introductionmentioning

confidence: 99%

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ZnSb Films on Flexible Substrates: Stability, Optical Bandgap, Electrical Properties, and Indium Doping

Elhoussieny,

Rehaag,

Bell

2023

Adv Elect Materials

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Undoped and In‐doped ZnSb thin films are deposited on rigid glass and flexible polyimide (Kapton) by physical vapor deposition. Detailed structural and chemical characterization is performed along with measurement of electrical and optical properties. These properties are very similar for films on glass and Kapton. Flexible ZnSb films show remarkable stability of electrical and optical properties, which are unchanged after 104 cycles of linear bending with surface strain 0.18%. Only severe flexing after this treatment (torsional bending with surface strain 1.7%) causes progressive degradation of conductivity over tens to hundreds of cycles. The ZnSb optical direct gap is determined to be 0.89 ± 0.05 eV. The optical direct gap of β Zn4Sb3 was 1.07 ± 0.05 eV. Other absorption features in the films, including smaller indirect gaps, are discussed.

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Section: Optical Bandgapmentioning

confidence: 92%