Pressure and temperature stability boundaries of cubic SiC polymorphs: a first-principles investigation

Pertierra, Pilar; Salvadó, Miguel A.; Franco, R.; Recio, J. M.

doi:10.1039/d2cp01266a

Phys. Chem. Chem. Phys.

2022

DOI: 10.1039/d2cp01266a

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Pressure and temperature stability boundaries of cubic SiC polymorphs: a first-principles investigation

Pilar Pertierra

Miguel A. Salvadó

R. Franco

et al.

Abstract: A better understanding of the effects of thermal and pressure on the wide gap SiC semiconductor is necessary for both (i) an improvement of the performance of this compound in...

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Cited by 4 publications

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Simultaneous Fine-Tuning of Hirshfeld Topological Surfaces, Volumes, and their Voids to Optimize the Radiation Shielding Properties: A Case Study of Silicon Carbide (SiC)

Khattari

2023

Silicon

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Pressure and temperature stability boundaries of cubic SiC polymorphs: a first-principles investigation

Abstract: A better understanding of the effects of thermal and pressure on the wide gap SiC semiconductor is necessary for both (i) an improvement of the performance of this compound in...

Cited by 4 publications

References 66 publications

Simultaneous Fine-Tuning of Hirshfeld Topological Surfaces, Volumes, and their Voids to Optimize the Radiation Shielding Properties: A Case Study of Silicon Carbide (SiC)

Simultaneous Fine-Tuning of Hirshfeld Topological Surfaces, Volumes, and their Voids to Optimize the Radiation Shielding Properties: A Case Study of Silicon Carbide (SiC)

Cubic silicon carbide under tensile pressure: Spinodal instability

Multi-scale investigation of the mechanical-structural hallmarks of cubic-silicon-carbide under elevated pressures: Hirshfeld topological surfaces-first principles synergic approach

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