Cr1−δTe, as a unique series of
defective
compounds with a NiAs-type structure and periodic metal vacancies,
has attracted intensive research interest because of its diversity
in structure and property dependent on the tunable stoichiometric
ratio. Another feature of these compounds is their ability to switch
between NiAs- and MnP-type structures, in which there often exist
composition-, temperature-, or pressure-induced phase transitions
accompanied by intriguing physical property switching. Herein, we
report the syntheses of a series of Cr1−δTe
compounds with similar compositions but distinct crystal structures,
their phase transitions, anomalous transport, and photoelectric conduction
behaviors under high pressure (HP). For the three Cr1−δTe compounds with δ = 0, 0.25, 0.375, CrTe undergoes pressure-induced
NiAs-to-MnP phase transition at around 15 GPa, while Cr3Te4 and Cr5Te8 undergo isostructural
phase transitions at around 12 and 11 GPa, respectively. Electrical
transport measurements indicate anomalous conduction behaviors: CrTe
undergoes a semiconductor-to-metal transition at around 24 GPa, while
Cr3Te4 and Cr5Te8 show
unexpected metal–semiconductor–metal transitions sequentially
upon compression. Besides, CrTe and Cr5Te8 exhibit
pressure-induced n–p conduction-type switching at around 9
and 3 GPa, respectively, while Cr3Te4 shows
p-type conductivity in the full pressure range. Local structure analyses
based on in situ HP Raman spectra are performed to understand the
structure and property evolutions of Cr1−δTe under HP. Defective transition-metal chalcogenides with pressure-induced
NiAs-to-MnP phase transition and conduction-type conversion provide
a potential platform for the rational design of photoelectric conversion
devices.