Pressureless Silver Sintering Die-Attach for SiC Power Devices

Abstract

Pressureless silver sintering is an interesting die-attach technique that could overcome the reliability limitations of the power electronic devices caused by their packaging. In this paper, we study the manufacturing parameters that affect the die attach: atmosphere, drying time, heating ramp rate, sintering temperature and duration. It is found that sintering under air gives better results, but causes the substrates to oxidize. Sintering under nitrogen keeps the surfaces oxide-free, at the cost of a weaker attach.

Packaging with Double-Side Cooling Capability for SiC Devices, Based on Silver Sintering

“…In this paper, silver sintering is used to assemble the package, and to provide both topside and bottom- side interconnects between the die and the DBC substrates. The selected silver paste (Heraeus ASP295 or 117O2P2 [32]) is based on silver microparticles (as opposed to nanoparticles). Finally, the power module is encapsulated by a layer of fluorinated parylene.…”

Design and Manufacturing of a Double-Side Cooled, SiC based, High Temperature Inverter Leg

“…Silicon Nitride, however, might prove to be a better option from a reliablity point of view. No specific finish was applied on the copper layers, as silver sintering was found to work (albeit not optimally) on bare copper [9]. Here again, a better option might be a gold or silver-based finish (the exact composition will depend on the sintering paste).…”