Principles of solid-state lasers

Il'ichev, Nikolai N

doi:10.1533/9780857097507.2.171

Handbook of Solid-State Lasers 2013

DOI: 10.1533/9780857097507.2.171

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Principles of solid-state lasers

Nikolai N Il'ichev

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Cited by 3 publications

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Nonlinear transmittance of a diffusion-doped single crystal ZnSe:Fe²⁺ at a wavelength of 2940 nm at low and room temperature

Il'ichev¹,

Bufetova²,

Gulyamova³

et al. 2019

Laser Phys.

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The nonlinear transmittance of a single crystal ZnSe:Fe 2+ sample was measured at low and room temperature during the action of a laser pulse with a wavelength of 2940 nm. It was found that in a strong field (fluence 1.3 J cm −2 , a laser pulse duration of 320 ns, a peak intensity of 4.1 MW cm −2 ), the sample transmittance is about 70% at room and 77% at low temperature.In a single crystal ZnSe:Fe 2+ sample at a fluence of 1.3 J cm −2 and a spot diameter of high-power radiation of about 0.54 mm, at the temperature −168 °C lasing was observed along the surface of the sample, when feedback was provided by scattering from the matted surface of the sample. This effect should be taken into account when nonlinear transmittance measurements are fulfilled of a diffusion doped a single crystal ZnSe:Fe 2+ .

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Nonlinear transmittance of a diffusion-doped single crystal ZnSe:Fe²⁺ at a wavelength of 2940 nm at low and room temperature

Il'ichev¹,

Bufetova²,

Gulyamova³

et al. 2019

Laser Phys.

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Single-Nanosecond-Pulse Lasing in Heavily Doped Fe:ZnSe

Antonov¹,

Bukin

Dolmatov

et al. 2021

IEEE Photonics J.

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Dopant concentration effects on Si$$_{1-x}$$Ge$$_{x}$$ crystals for emerging light-source technologies: a molecular dynamics study

Dickers,

Sushko,

Korol

et al. 2024

Eur. Phys. J. D

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In this study, we conduct atomistic-level molecular dynamics simulations on fixed-sized silicon-germanium (Si$$_{1-x}$$ 1 - x Ge$$_{x}$$ x ) crystals to elucidate the effects of dopant concentration on the crystalline inter-planar distances. Our calculations consider a range of Ge dopant concentrations between pure Si (0%) and 15%, and for both the optimised system state and a temperature of 300K. We observe a linear relationship between Ge concentration and inter-planar distance and lattice constant, in line with the approximation of Vegard’s Law, and other experimental and computational results. These findings will be employed in conjunction with future studies to establish precise tolerances for use in crystal growth, crucial for the manufacture of crystals intended for emerging gamma-ray crystal-based light source technologies. Graphical abstract

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Principles of solid-state lasers

Cited by 3 publications

References 43 publications

Nonlinear transmittance of a diffusion-doped single crystal ZnSe:Fe²⁺ at a wavelength of 2940 nm at low and room temperature

Nonlinear transmittance of a diffusion-doped single crystal ZnSe:Fe²⁺ at a wavelength of 2940 nm at low and room temperature

Single-Nanosecond-Pulse Lasing in Heavily Doped Fe:ZnSe

Dopant concentration effects on Si$$_{1-x}$$Ge$$_{x}$$ crystals for emerging light-source technologies: a molecular dynamics study

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Principles of solid-state lasers

Cited by 3 publications

References 43 publications

Nonlinear transmittance of a diffusion-doped single crystal ZnSe:Fe2+ at a wavelength of 2940 nm at low and room temperature

Nonlinear transmittance of a diffusion-doped single crystal ZnSe:Fe2+ at a wavelength of 2940 nm at low and room temperature

Single-Nanosecond-Pulse Lasing in Heavily Doped Fe:ZnSe

Dopant concentration effects on Si$$_{1-x}$$Ge$$_{x}$$ crystals for emerging light-source technologies: a molecular dynamics study

Contact Info

Product

Resources

About

Nonlinear transmittance of a diffusion-doped single crystal ZnSe:Fe²⁺ at a wavelength of 2940 nm at low and room temperature

Nonlinear transmittance of a diffusion-doped single crystal ZnSe:Fe²⁺ at a wavelength of 2940 nm at low and room temperature