Profiling Organisational Commitment

Abstract

The main objectives of this study were to compare Organisational Commitment for the employees in service and manufacturing public sector organisations, to see the association between subscales of organizational commitment and to compare these dimensions of organizational commitment vis-à-vis different psycho-demographic factors of the employees. The scope of the study was Public Sector Organisations belonging to Punjab, Haryana and Chandigarh. The sample comprised of 225 respondents drawn from eight public sector organisations, 2 each from Engineering, Textile, Banking and Insurance sectors, to represent the Manufacturing and Service Sector organizations adequately. Comparisons made on the basis of hierarchical levels and other psycho-demographic factors make the study comprehensive. The results revealed a very significant but weak positive correlation between three subscales of Organisational Commitment. Almost all other null hypotheses concerning level of Organisational Commitment vis-à-vis failed to be rejected unlike previous similar studies.

Is the Registry Between Adjacent Graphene Layers Grown on C-Face SiC Different Compared to That on Si-Face SiC

“…The other curves, labeled A, B and C in Figure 1b and D and E in Figure 1d, do not show similarly well-defined and pronounced modulations of the reflectivity and, therefore, indicate areas where a mixture of different number of graphene layers exist. The really dark areas in both Figure 1a,c showed no grapheme coverage, but presence of an ordered silicate, observed and discussed earlier [7][8][9]16,17]. The essential point here was that large enough areas of 1 ML, 2 ML and 4 ML of graphene were identified by LEEM, so selected area PES, LEED and ARPES could be applied.…”

“…They have moreover reported [7,8,16,17,20] formation of smaller domains and grain sizes considerably smaller than 2 μm, so selected area LEED patterns collected looked practically identical to large-area LEED patterns. Only when prepared under a high pressure of disilane, i.e., in the 10…”

“…Other research groups have so far utilized growth temperatures considerably lower than 1900 °C when growing graphene on C-face SiC [1][2][3][4][5]7,8,10,16,17,20]. They have moreover reported [7,8,16,17,20] formation of smaller domains and grain sizes considerably smaller than 2 μm, so selected area LEED patterns collected looked practically identical to large-area LEED patterns.…”

“…To note here is that the angle of rotation between the (1 × 1) diffraction spots from the graphene and the SiC substrate is very different compared to that obtained in Figure 2, which was close to the 30° always observed between the graphene and the SiC substrate spots in LEED patterns from the Si-terminated surface. There, the carbon buffer layer acts as a template and fixes the angle to 30°, while on the C-face, no such buffer layer forms and islands of graphene can nucleate at different rotation angles relative to the SiC substrate [4,7,8,16,17]. The important point that we want to stress here is, however, that no superstructure spots are observed in these μ-LEED patterns and that this shows that there is no rotational disorder between adjacent layers on the 2 MLs and 3 MLs areas of this sample prepared by sublimation at 1500 °C in high vacuum.…”

Spatially Resolved Mapping of Electrical Conductivity across Individual Domain (Grain) Boundaries in Graphene

“…2,23 Figure 1b is the STM image of a boundary between monolayer (ML) and bilayer (BL) graphene, clearly showing moiré pattern and atomic lattice of graphene with a background due to the   30 ) 3 6 3 6 ( R reconstructed buffer layer. 24 The BL graphene appears much smoother than the ML.…”